IDT, Integrated Device Technology 內存
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類別半導體 / 內存IC / 內存
制造商IDT, Integrated Device Technology Inc
記錄 6,649
頁面 41/222
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
3,400 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
2,340 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
6,678 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
3,636 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
8,676 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
3,276 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
2,844 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
7,812 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
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IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
4,734 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
6,876 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
824 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 100ns | 100ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
8,242 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
8,190 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
215 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
5,544 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
8,064 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
|
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
9,492 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
492 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
5,256 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
3,942 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
|
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
4,950 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
|
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IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CERDIP |
6,696 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 85ns | 85ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 28CDIP |
4,428 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 85ns | 85ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
|
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|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
6,318 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
2,574 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 64TQFP |
2,610 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 15ns | 15ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 64TQFP |
5,742 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 100TQFP |
4,231 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 15ns | 15ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 100TQFP |
3,510 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 64TQFP |
574 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |