Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 198/225
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制造商 |
描述 |
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系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 20V 100A 5X6 PQFN |
8,370 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Ta), 100A (Tc) | 2.5V, 10V | 0.95mOhm @ 50A, 10V | 1.1V @ 150µA | 230nC @ 4.5V | ±12V | 10890pF @ 10V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A 5X6 PQFN |
4,140 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3100pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 11A 3X3 PQFN |
2,862 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 24A (Tc) | 10V, 20V | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | ±25V | 1543pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
8,964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A 5X6 PQFN |
6,624 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | ±16V | 4730pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
3,276 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | ±16V | 5360pF @ 25V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23-3 |
7,398 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 740pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23-3 |
2,070 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 633pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 55V 16A DPAK |
3,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 27A 8-SO |
8,226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta) | 2.5V, 4.5V | 2.45mOhm @ 27A, 4.5V | 1.1V @ 100µA | 195nC @ 4.5V | ±12V | 8555pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V DIRECTFET S1 |
7,236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 63A (Tc) | 4.5V, 10V | 3.8mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 1.8W (Ta), 26W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V DIRECTFET MX |
3,114 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | 4420pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 30V 16A 8-SO |
3,490 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 16A, 10V | 2.4V @ 50µA | 92nC @ 10V | ±20V | 2820pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 15A 8-SO |
8,892 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.4V @ 50µA | 98nC @ 10V | ±20V | 2590pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SO |
8,100 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 11.9mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | ±20V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO |
2,862 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | ±20V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 5.4A 8-SO |
6,444 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 59mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | ±20V | 386pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SO |
8,802 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 10V, 20V | 8.5mOhm @ 12A, 20V | 2.4V @ 25µA | 52nC @ 10V | ±25V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO |
7,920 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 13.3mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | ±25V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 21A 8-PQFN |
3,078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 3090pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 13A 8-PQFN |
4,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 13A (Ta), 71A (Tc) | 10V | 9.6mOhm @ 43A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2474pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 82A 8-PQFN |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 82A (Tc) | 4.5V, 10V | 4.2mOhm @ 49A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2190pF @ 15V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 150A TO263CA-7 |
4,266 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-263CA-7 | TO-263-7 (Straight Leads) |
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Infineon Technologies |
MOSFET N-CH 40V DIRECTFET-ST |
8,964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 40V DIRECTFET-ST |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET-MU |
4,410 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 69A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1410pF @ 10V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MU | DirectFET™ Isometric MU |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET-MP |
7,884 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1250pF @ 10V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-MN |
4,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-MN |
5,184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SJ |
6,444 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |