Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 23/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 700V 43.3A TO247 |
13,608 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.76mA | 170nC @ 10V | ±20V | 5030pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 34.6A TO-247 |
8,910 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 34.6A (Tc) | 10V | 100mOhm @ 21.9A, 10V | 3.9V @ 1.9mA | 200nC @ 10V | ±20V | 4500pF @ 25V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
7,200 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 63A (Tc) | 10V | 31mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141nC @ 10V | ±20V | 5623pF @ 400V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 83.2A TO247-3 |
7,596 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 83.2A (Tc) | 10V | 37mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330nC @ 10V | ±20V | 7240pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 20V 5.6A 6-TSOP |
27,108 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.6A (Ta) | 2.5V, 4.5V | 50mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 16nC @ 5V | ±12V | 1079pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A SOT223 |
42,864 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | ±16V | 158pF @ 400V | - | 6.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH 30V 6A PQFN |
34,548 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | ±20V | 580pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 600V 0.09A SOT-89 |
34,026 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8nC @ 10V | ±20V | 131pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
40,782 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223 |
26,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A MICRO8 |
31,248 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | ±20V | 520pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 53A TDSON-8 |
46,782 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2V @ 250µA | 27nC @ 10V | ±20V | 2100pF @ 15V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 5.4A 8-SOIC |
35,316 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 59mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | ±20V | 386pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 1.7A TO252-3 |
26,280 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 3.3Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6nC @ 10V | ±20V | 93pF @ 100V | - | 18.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 81A DPAK |
20,940 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | ±20V | 1470pF @ 13V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
51,774 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A 5X6 PQFN |
27,810 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 3180pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3 |
26,226 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 10µA | 21nC @ 10V | ±16V | 1560pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8 |
263,916 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 35nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT223 |
39,054 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313 |
36,888 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 15µA | 18.2nC @ 10V | ±20V | 1430pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO252-3 |
20,628 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
143,694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 2400pF @ 15V | - | 2.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 56A DPAK |
34,428 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 6V, 10V | 5.1mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | ±20V | 2110pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN |
34,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | ±20V | 2155pF @ 25V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
N-CHANNEL_55/60V |
20,016 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 13A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | 354pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 550V 7.6A TO252 |
57,186 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 16A TSDSON-8 |
241,530 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2V @ 250µA | 16nC @ 10V | ±20V | 1200pF @ 12V | - | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A 8VQFN |
64,518 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 79A (Tc) | 4.5V, 10V | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2360pF @ 10V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 800V 3A TO252-3 |
42,210 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |