Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 63/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3 |
5,004 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 8A TO220 |
8,694 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3 |
5,004 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO-263 |
4,878 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
5,022 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 24A TO220 |
6,210 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56nC @ 10V | ±20V | 4100pF @ 30V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 13A TO220 |
4,968 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220 |
7,128 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO220-3 |
3,708 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 8A TO220 |
4,914 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13A TO220 |
2,682 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 550V 17A TO-220 |
2,322 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13A TO247-3 |
6,678 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 18A TO220 |
2,952 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO-247 |
4,482 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | ±20V | 3000pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 48A TO247-3 |
3,258 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO247-4 |
2,664 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO247-4 |
2,898 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
3,078 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 52nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 18A TO252-3 |
6,660 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
8,964 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
6,012 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-247 |
8,010 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
6,228 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 22A TO247-3 |
6,012 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 27A TO252-3 |
2,358 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 27A (Tc) | 5V, 10V | 50mOhm @ 50A, 10V | 2V @ 31µA | 33nC @ 10V | ±20V | 630pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
5,454 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 14.7A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 112W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 5.4A IPAK |
4,950 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO252-3 |
2,124 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77nC @ 10V | ±20V | 5550pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH <= 40V |
3,042 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2.3V @ 250µA | 28nC @ 10V | ±20V | 1900pF @ 20V | - | 3W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |