Micron Technology Inc. 內存
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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 16/287
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Micron Technology Inc. |
IC FLASH 512M SPI 24TPBGA |
262 |
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- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Micron Technology Inc. |
IC DRAM 256M PARALLEL 66TSOP |
3,834 |
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- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Micron Technology Inc. |
IC DRAM 128M PARALLEL 54TSOP |
2,106 |
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Automotive, AEC-Q100 | Volatile | DRAM | SDRAM | 128Mb (16M x 8) | Parallel | 167MHz | 12ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Micron Technology Inc. |
IC DRAM 128M PARALLEL 54TSOP |
5,238 |
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Automotive, AEC-Q100 | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Micron Technology Inc. |
IC FLASH 512M PARALLEL 64LBGA |
3,508 |
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- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
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Micron Technology Inc. |
IC FLASH 512M PARALLEL 56VFBGA |
7,848 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-VFBGA | 56-VFBGA (7x9) |
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Micron Technology Inc. |
IC FLASH 512M PARALLEL 56VFBGA |
6,966 |
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- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-VFBGA | 56-VFBGA (7x9) |
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Micron Technology Inc. |
IC FLASH SLC 4G 256MX16 FBGA |
5,904 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
5,886 |
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Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC FLASH NAND 4G PAR 63VFBGA |
6,498 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH 4G SPI TBGA |
4,464 |
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Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NAND | 4Gb (4G x 1) | SPI | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TC) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Micron Technology Inc. |
IC FLASH NAND 4G SLC TBGA |
3,544 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (4G x 1) | SPI | 83MHz | - | - | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
5,778 |
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- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC FLASH 1G SPI SOIC |
3,996 |
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- | Non-Volatile | FLASH | FLASH - NAND | 1Gb (1G x 1) | SPI | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
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Micron Technology Inc. |
SLC 4G DIE 512MX8 |
5,994 |
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* | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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Micron Technology Inc. |
SLC 4G DIE 512MX8 |
2,934 |
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* | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | - |
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Micron Technology Inc. |
IC DRAM 1G PARALLEL 84FBGA |
2,736 |
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- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 533MHz | 15ns | 350ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
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Micron Technology Inc. |
IC FLASH SLC 4G 256MX16 FBGA |
7,362 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 48TSOP1 |
2,268 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Micron Technology Inc. |
IC FLASH NAND 4G PAR 63VFBGA |
6,894 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC SDRAM DDR2 512M 84FBGA |
8,136 |
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Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR2 | 512M (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
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Micron Technology Inc. |
IC FLASH 512M SPI 133MHZ 16SOP2 |
4,932 |
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- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
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Micron Technology Inc. |
IC SDRAM DDR2 1G 84FBGA |
8,604 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
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Micron Technology Inc. |
IC DRAM 2G PARALLEL 96FBGA |
3,204 |
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- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | - | 13.75ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
3,186 |
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Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC FLASH NAND 4G PAR 63VFBGA |
3,870 |
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Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Micron Technology Inc. |
IC DRAM 1G PARALLEL 96FBGA |
7,830 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR3L | 1Gb (64M x 16) | Parallel | 933MHz | - | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
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Micron Technology Inc. |
IC FLASH 512M SPI 133MHZ WLCSP |
6,264 |
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- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH 2G PARALLEL 48TSOP |
7,290 |
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- | Non-Volatile | FLASH | FLASH - NAND | 2Gb (256M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
3,312 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |