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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 238/287
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制造商
描述
庫存
數量
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內存類型
內存格式
技術
內存大小
內存接口
時鐘頻率
寫周期-字,頁
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工作溫度
安裝類型
包裝/箱
供應商設備包裝
MT40A512M8RH-075E AIT:B TR
Micron Technology Inc.
IC DRAM 4G PARALLEL 78FBGA
4,842
-
Volatile
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.33GHz
-
-
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x10.5)
MT41K1G16DGA-125:A TR
Micron Technology Inc.
IC DRAM 16G PARALLEL 96FBGA
8,136
-
Volatile
DRAM
SDRAM - DDR3L
16Gb (1G x 16)
Parallel
800MHz
-
13.75ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9.5x14)
EDFP112A3PB-GD-F-D TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
4,860
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-GD-F-R TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
8,676
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-D TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
2,844
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-R TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
8,856
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
MTFC4GMDEA-4M IT TR
Micron Technology Inc.
IC FLASH 32G MMC 153VFBGA
3,366
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
EDFP112A3PB-GDTJ-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
5,310
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 105°C (TC)
-
-
-
EDFP112A3PB-GD-F-D
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
6,642
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-GD-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
8,766
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-D
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
7,776
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
6,768
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
MT42L16M32D1U67MWC2
Micron Technology Inc.
IC LPDDR2 SDRAM 1GBIT
3,436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT42L32M16D1U67MWC1
Micron Technology Inc.
LPDDR2
4,554
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT42L32M16D1U67MWC2
Micron Technology Inc.
LPDDR2
8,334
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B256M32D1GZ-062 AIT:B
Micron Technology Inc.
IC DRAM 8G 1600MHZ
8,766
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
8Gb (256M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B256M32D1GZ-062 WT:B
Micron Technology Inc.
IC DRAM 8G 1600MHZ FBGA
5,346
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
8Gb (256M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 AIT:B
Micron Technology Inc.
IC DRAM 16G 1600MHZ
6,822
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 WT:B
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
4,824
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT29F128G08EBCBBJ4-6:B
Micron Technology Inc.
IC FLASH 128G PARALLEL 166MHZ
6,930
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
166MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F512G08EMCBBJ5-10:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 100MHZ
4,950
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBB95A3WC1
Micron Technology Inc.
IC FLASH 128G PARALLEL
4,140
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBB95A3WC1-M
Micron Technology Inc.
IC FLASH 128G PARALLEL
6,228
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBWP:B
Micron Technology Inc.
IC FLASH 128G PARALLEL
2,160
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F256G08EECBBJ4-6:B
Micron Technology Inc.
IC FLASH 256G PARALLEL 167MHZ
6,696
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F256G08EFEBBWP:B
Micron Technology Inc.
IC FLASH 256G PARALLEL 48TSOP
6,228
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F512G08EKCBBJ5-6:B
Micron Technology Inc.
NAND FLASH
7,038
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F512G08EMCBBJ5-6:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 167MHZ
6,444
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08EMCBBJ5-6:B.001
Micron Technology Inc.
IC FLASH 512G PARALLEL 167MHZ
3,348
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT38W201DAA033JZZI.X68
Micron Technology Inc.
MCP 5MX16 PLASTIC 2.0V IND
2,412
*
-
-
-
-
-
-
-
-
-
-
-
-
-