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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 254/287
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包裝/箱
供應商設備包裝
MT53D512M32D2NP-046 AAT:D TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
4,770
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 105°C (TA)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-046 AIT:D TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
2,268
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 85°C (TA)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-046 AUT:D TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
7,272
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 125°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-046 WT:D TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
6,858
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-046 WT:E TR
Micron Technology Inc.
IC SDRAM LPDDR4 16GBIT 512MX32 F
3,042
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-053 WT:D TR
Micron Technology Inc.
IC DRAM 16G 1866MHZ
2,142
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M32D2NP-062 WT:D TR
Micron Technology Inc.
IC DRAM 16G 1600MHZ
8,604
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D512M64D4NW-046 WT:D TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
2,466
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
432-VFBGA
432-VFBGA (15x15)
MT53D512M64D4NW-053 WT:D TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ
2,484
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
432-VFBGA
432-VFBGA (15x15)
MT53D512M64D4NW-062 WT:D TR
Micron Technology Inc.
IC DRAM 32G 1600MHZ
6,678
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
432-VFBGA
432-VFBGA (15x15)
MT53D512M64D4SB-046 XT:D TR
Micron Technology Inc.
IC DRAM 32G 2133MHZ
7,524
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53D512M64D8TZ-053 WT:B TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ
3,186
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D768M64D8JS-053 WT:D TR
Micron Technology Inc.
IC DRAM 48G 1866MHZ FBGA
5,166
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
366-VFBGA
366-VFBGA (12x12.7)
MT53D768M64D8RG-053 WT:D TR
Micron Technology Inc.
IC DRAM 48G 1866MHZ FBGA
4,392
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D768M64D8SQ-046 WT:E TR
Micron Technology Inc.
IC DRAM 48G 2133MHZ FBGA
6,354
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-VFBGA
556-VFBGA (12.4x12.4)
MT53D768M64D8WF-053 WT:D TR
Micron Technology Inc.
IC DRAM 48G 1866MHZ FBGA
2,718
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D8DATZ-DC TR
Micron Technology Inc.
IC SDRAM LPDDR4 32GBIT 512MX64 F
8,082
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
-
-
-
-
-
1.1V
-
-
-
-
MTFC128GAOANEA-WT TR
Micron Technology Inc.
IC FLASH 1T MMC
4,122
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MTFC256GBAOANAM-WT TR
Micron Technology Inc.
IC FLASH 2T MMC
2,502
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MTFC32GAKAEEF-O1 AIT TR
Micron Technology Inc.
IC FLASH 256G MMC
4,410
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-TFBGA
169-TFBGA (14x18)
MTFC64GAJAEDN-AAT TR
Micron Technology Inc.
IC FLASH 512G MMC
6,372
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 105°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MTFC64GAJAEDQ-AAT TR
Micron Technology Inc.
IC FLASH 512G MMC
8,118
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 105°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
MTFC64GAPAKEA-WT TR
Micron Technology Inc.
IC FLASH 512G MMC
3,618
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MTFC64GAQAMEA-WT TR
Micron Technology Inc.
IC FLASH 512G MMC
7,560
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MT29F1G08ABBDAM68A3WC1
Micron Technology Inc.
IC FLASH 1G PARALLEL WAFER
7,200
-
Non-Volatile
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
-
-
-
MT29F2G08ABAEAM69A3WC1
Micron Technology Inc.
IC FLASH 2G PARALLEL
4,446
-
Non-Volatile
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
-
-
-
MT29F2G08ABBEAM69A3WC1
Micron Technology Inc.
IC FLASH 2G PARALLEL
3,418
-
Non-Volatile
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
-
-
-
MT29F2G16ABBEAM69A3WC1
Micron Technology Inc.
IC FLASH 2G PARALLEL
8,082
-
Non-Volatile
FLASH
FLASH - NAND
2Gb (128M x 16)
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
-
-
-
MT29F16G08CBACAL72A3WC1-V
Micron Technology Inc.
IC FLASH 16G PARALLEL WAFER
4,176
-
Non-Volatile
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F1G16ABBEAM68M3WC2
Micron Technology Inc.
IC FLASH 1G PARALLEL
7,578
-
Non-Volatile
FLASH
FLASH - NAND
1Gb (64M x 16)
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
-
-
-