ON Semiconductor 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商ON Semiconductor
記錄 2,271
頁面 51/76
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
SIC DIODE 650V |
4,608 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 30A | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1280pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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|
ON Semiconductor |
1200V 10A SIC SBD |
6,372 |
|
- | Silicon Carbide Schottky | 1200V | 17A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 16A SIC SBD |
4,032 |
|
- | Silicon Carbide Schottky | 650V | 11A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
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|
ON Semiconductor |
650V 20A SIC SBD |
7,416 |
|
- | Silicon Carbide Schottky | 650V | 13A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SBD 10A 120V D2PAK-3 |
778 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO220-2 |
4,112 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD |
2,754 |
|
- | Silicon Carbide Schottky | 650V | 23A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 20A AUTO SIC SBD |
6,138 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 15A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
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|
ON Semiconductor |
1200V 40A SIC SBD |
3,042 |
|
- | Silicon Carbide Schottky | 1200V | 61A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 2250pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 125V 200MA DO35 |
2,052 |
|
- | Standard | 125V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 125V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 30A TO247 |
5,706 |
|
- | Standard | 1000V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247 |
5,760 |
|
- | Standard | 1200V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
4,212 |
|
- | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 100A TO218 |
5,436 |
|
- | Standard | 600V | 100A | 1.6V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 150A TO218 |
2,484 |
|
- | Standard | 600V | 150A | 1.6V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 80A TO218 |
2,520 |
|
- | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 85V 200MA SOT23-3 |
6,120 |
|
- | Standard | 85V | 200mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 250V 200MA SOT23 |
6,246 |
|
- | Standard | 250V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 150°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
4,914 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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|
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOT23 |
3,798 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
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|
ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO220-2L |
8,820 |
|
Stealth™ | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 100µA @ 1200V | 30pF @ 10V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
8,748 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
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ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
2,340 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
3,598 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
3,454 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
2,916 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 800V 1A DO41 |
4,176 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 1A DO41 |
4,770 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
6,930 |
|
- | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
6,408 |
|
- | Standard | 100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |