整流器-單

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

頁面 1051/1165

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
RSFGLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	5,832	Automotive, AEC-Q101	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	7,614	Automotive, AEC-Q101	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	6,318	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	8,622	Automotive, AEC-Q101	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	5,940	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	2,556	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	4,338	Automotive, AEC-Q101	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	2,232	-	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	7,578	Automotive, AEC-Q101	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	5,526	Automotive, AEC-Q101	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1AL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4,752	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1AL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	8,082	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	7,182	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4,752	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4,554	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2,592	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	5,148	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	3,780	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	8,892	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	3,456	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	6,534	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	8,496	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	8,334	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	7,002	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	7,758	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8,892	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	7,956	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	6,966	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1KL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	7,902	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1KL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	4,356	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C

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