整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

頁面 1057/1165

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
S15MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A DO214AB	6,498	Automotive, AEC-Q101	Standard	-	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	4,464	-	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3BHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	5,400	Automotive, AEC-Q101	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	6,120	-	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	2,988	-	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3GHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	4,500	Automotive, AEC-Q101	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	5,580	-	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3JHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	4,356	Automotive, AEC-Q101	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	7,776	-	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3KHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	3,672	Automotive, AEC-Q101	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3MHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	8,856	Automotive, AEC-Q101	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO214AB	6,444	-	Standard	50V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB	2,646	-	Standard	100V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	4,176	-	Standard	200V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	4,392	-	Standard	400V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	2,898	-	Standard	800V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 4A DO214AB	4,626	-	Standard	-	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	3,564	-	Standard	50V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	5,724	-	Standard	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	5,220	-	Standard	200V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	2,250	-	Standard	400V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	4,662	-	Standard	600V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	7,164	-	Standard	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	8,784	-	Standard	-	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	4,860	-	Standard	800V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	6,660	Automotive, AEC-Q101	Standard	800V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A DO214AB	5,688	-	Standard	-	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A DO214AB	3,690	Automotive, AEC-Q101	Standard	-	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK510C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AB	3,472	-	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK510CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AB	5,202	Automotive, AEC-Q101	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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