整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
V2PM12-M3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 2A MICROSMP	84,414	eSMP®	Schottky	120V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 120V	140pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-40°C ~ 175°C
S15DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W	106,314	-	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A SOD123W	26,844	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15KLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A SOD123W	28,122	-	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A SOD123W	25,974	-	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ACDBA140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AC	53,214	Automotive, AEC-Q101	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	65pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
S1KL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	100,512	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	93,348	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RS1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	100,356	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	19,134	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CS2D-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 2A 200V DO-214AA SMB	158,778	-	Standard	200V	1.6A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.1µs	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS13L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	26,496	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
MSS1P3HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A MICROSMP	32,070	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	50pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-55°C ~ 150°C
MSS1P5HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A MICROSMP	37,542	Automotive, AEC-Q101	Schottky	50V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-55°C ~ 150°C
S2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	110,784	-	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2AA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	16,986	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	16,506	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SL04-HM3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.1A DO219AB	159,864	Automotive, AEC-Q101, eSMP®	Schottky	40V	1.1A	540mV @ 1.1A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	20µA @ 40V	65pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	175°C (Max)
RB751G-40-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 30MA SOD723	90,774	-	Schottky	30V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	2pF @ 1V, 1MHz	Surface Mount	SOD-723	SOD-723	125°C (Max)
PMEG1020EV,115	Nexperia	DIODE SCHOTTKY 10V 2A SOT666	32,544	-	Schottky	10V	2A (DC)	460mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 10V	45pF @ 5V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-666	150°C (Max)
HS1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	24,480	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	16pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
NRVB0530T1G	ON Semiconductor	DIODE SCHOTTKY 30V 500MA SOD123	54,054	-	Schottky	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
RS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	55,242	-	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFAL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA	15,798	-	Standard	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 500MA SUBSMA	19,524	-	Standard	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CS2M-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 2A 1000V DO-214AA SMB	101,622	-	Standard	1000V	1.6A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.1µs	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HER106G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	58,404	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS12L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	51,828	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	22,722	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SB007-03C-TB-E	ON Semiconductor	DIODE SCHOTTKY 30V 70MA 3CP	55,548	-	Schottky	30V	70mA	550mV @ 70mA	Small Signal =< 200mA (Io), Any Speed	10ns	5µA @ 15V	3pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP	-55°C ~ 125°C

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