整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 152/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
37,248 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214BA |
23,076 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO214BA |
24,282 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
32,316 |
|
- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 50V DO-214AB |
13,554 |
|
- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 5A SOD128 |
23,316 |
|
- | Schottky | 100V | 5A | 760mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | SOD-128 | SOD128Flat | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A SOD57 |
6,010 |
|
- | Avalanche | 200V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
193,020 |
|
- | Avalanche | 600V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
142,716 |
|
- | Avalanche | 200V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO213AB |
36,666 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35 |
119,364 |
|
- | Standard | 150V | 200mA | 650mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 120ns | 100nA @ 150V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
28,182 |
|
- | Schottky | 30V | 2A | 440mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
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|
Rohm Semiconductor |
RF201LAM4STF IS THE HIGH RELIABI |
27,150 |
|
Automotive, AEC-Q101 | Standard | 400V | 1.5A | 1.2V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 400V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
|
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|
Nexperia |
DIODE SCHOTTKY 30V 3A CFP15 |
12,708 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 150µA @ 30V | 495pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
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|
Nexperia |
DIODE SCHOTTKY 50V 3A CFP15 |
16,884 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A (DC) | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 100µA @ 50V | 350pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN |
13,446 |
|
Automotive, AEC-Q101 | Schottky | 45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | 300pF @ 45V, 1MHz | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
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|
Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
24,228 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A SOD57 |
190,188 |
|
- | Avalanche | 400V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 1A SOD57 |
200,652 |
|
- | Standard | 1200V | 1A | 3.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 125°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
161,250 |
|
- | Avalanche | 800V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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|
Nexperia |
DIODE SCHOTTKY 45V 5A CFP15 |
39,396 |
|
Automotive, AEC-Q101 | Schottky | 45V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 300µA @ 45V | 580pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
31,410 |
|
- | Schottky | 50V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AA |
53,568 |
|
- | Standard | 600V | 3A | 1.05V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 20µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A DO214AB |
18,768 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
50,250 |
|
- | Avalanche | 400V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
32,262 |
|
- | Avalanche | 600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A TO277A |
46,452 |
|
eSMP® | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A DO214AB |
18,120 |
|
- | Standard | 400V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |
324,814 |
|
- | Standard | 800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
21,828 |
|
- | Standard | 200V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |