整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 262/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
DIODE GEN PURP 600V 9.5A TO220 |
9,156 |
|
- | Standard | 600V | 9.5A | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -40°C ~ 125°C |
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|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
23,832 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
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STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220FP |
21,648 |
|
- | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17,232 |
|
- | Silicon Carbide Schottky | 650V | 2.15A (DC) | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-247 |
8,556 |
|
FRED Pt® | Standard | 1200V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 113ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-247 |
7,620 |
|
FRED Pt® | Standard | 1200V | 30A | 3.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2 |
5,688 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.35V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 650V TO220-2 |
14,892 |
|
- | Silicon Carbide Schottky | 650V | 8.8A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
9,384 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 50A | 1.69V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 163ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
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|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
11,928 |
|
- | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 430pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
23,184 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
16,320 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
12,666 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
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|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17,808 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
16,896 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
1,001 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO220FM |
19,992 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 175°C (Max) |
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|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
20,748 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
23,712 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO247 |
6,384 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
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Microsemi |
GEN2 SIC SBD 700V 30A D3PAK |
5,670 |
|
- | Silicon Carbide Schottky | 700V | 30A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
|
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SMC Diode Solutions |
DIODE SCHOTTKY 45V 120A SPD-3A |
6,984 |
|
- | Schottky | 45V | 120A | 660mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4mA @ 45V | 4800pF @ 5V, 1MHz | Surface Mount | SPD-3A | SPD-3A | -55°C ~ 175°C |
|
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Microsemi |
DIODE SCHOTTKY 700V 50A TO247 |
6,252 |
|
- | Silicon Carbide Schottky | 700V | 50A (DC) | 1.5V @ 50A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
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|
Cree/Wolfspeed |
ZRECTM 15A 1200V SIC SCHOTTKY DI |
6,480 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 39A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1.2nF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
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|
Microsemi |
GEN2 SIC SBD 700V 50A D3PAK |
7,128 |
|
- | Silicon Carbide Schottky | 700V | 88A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 700V | 2034pF @ 1V, 1MHz | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
|
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|
Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-268 |
6,324 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | - |
|
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|
Cree/Wolfspeed |
E SERIES, 20 AMP, 1200V G4 SCHOT |
8,182 |
|
Automotive, AEC-Q101, E | Silicon Carbide Schottky | 1200V | 54.5A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1500pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE MODULE 400V ISOTOP |
6,822 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | SOT-227-4, miniBLOC | ISOTOP | - |
|
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SMC Diode Solutions |
DIODE SCHOTTKY 80V 240A PRM1-1 |
5,346 |
|
- | Schottky | 80V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 80V | 5500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
|
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|
GeneSiC Semiconductor |
SIC DIODE 1200V 50A TO-247-2 |
6,504 |
|
- | Silicon Carbide Schottky | 1200V | 212A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 3263pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |