整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 278/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
3,526 |
|
- | Standard | 800V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
5,202 |
|
- | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
8,928 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 6A P600 |
2,916 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 1000V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
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|
Micro Commercial Co |
5A,100V,SCHOTTKY,DO-201AD PACKAG |
4,302 |
|
- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
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|
SMC Diode Solutions |
DIODE GEN PURP 300V D2PAK |
7,092 |
|
- | Standard | 300V | - | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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SMC Diode Solutions |
DIODE SCHOTTKY 60V D2PAK |
5,040 |
|
- | Schottky | 60V | - | 650mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 850µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V D2PAK |
2,700 |
|
- | Schottky | 150V | - | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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SMC Diode Solutions |
DIODE SCHOTTKY 100V D2PAK |
4,824 |
|
- | Schottky | 100V | - | 750mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | 462pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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|
Micro Commercial Co |
DIODE GEN PURP 1KV 3A DO201AD |
6,984 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 50V 10A POWERDI5 |
7,362 |
|
SBR® | Super Barrier | 50V | 10A | 450mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 75mA @ 50V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
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Central Semiconductor Corp |
DIODE GEN PURP 150V 150MA SOD123 |
3,870 |
|
- | Standard | 150V | 150mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | 860pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
3,654 |
|
- | Standard | 200V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AB |
6,786 |
|
- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A DO214AB |
7,506 |
|
- | Schottky | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2.4A TO277A |
2,376 |
|
eSMP® | Avalanche | 200V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 15A DO214AB |
4,122 |
|
- | Standard | 800V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 800V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1.5A AXIAL |
4,950 |
|
- | Standard | 600V | 1.5A | 1.1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 1.2A AXIAL |
6,012 |
|
- | Standard | 1000V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 35V 20A TO220AC |
18,876 |
|
- | Schottky | 35V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 35V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 6A R6 |
5,346 |
|
- | Standard | 400V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 140pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 1A SMB |
4,122 |
|
- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 1A SMB |
4,248 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.3A TO277 |
4,284 |
|
eSMP® | Avalanche | 1000V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Panasonic Electronic Components |
CSP SCHOTTKY BARRIER DIODE |
6,426 |
|
- | Schottky | 40V | 5A | 600mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 40V | 140pF @ 10V, 1MHz | Surface Mount | 0606 (1616 Metric) | DCSP1616010-N1 | 150°C (Max) |
|
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|
Micro Commercial Co |
DIODE GEN PURP 600V 6A DO201AD |
3,276 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 50V 15A POWERDI5 |
6,642 |
|
TrenchSBR | Super Barrier | 50V | 15A | 540mV @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 150µA @ 50V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201 |
2,088 |
|
SUPERECTIFIER® | Standard | 1000V | 2.5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 100V 1A STMITEFLA |
8,532 |
|
- | Schottky | 100V | 1A | 770mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4µA @ 100V | - | Surface Mount | DO-222AA | STmite Flat | 175°C (Max) |
|
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|
Micro Commercial Co |
DIODE SCHOTTKY 100V 10A D2PAK |
5,688 |
|
- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -65°C ~ 125°C |