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數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 451/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
ESH2CA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
5,148
-
Standard
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
ESH2DA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
4,284
-
Standard
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
B390BE-13
Diodes Incorporated
DIODE SCHOTTKY 90V 3A SMB
4,968
-
Schottky
90V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 90V
105pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
ES3A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
2,268
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
6,372
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6,588
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3DV V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,266
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ESH3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,680
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6,354
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
7,236
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
VSSAF56-M3/6B
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 5A DO221AC
8,280
TMBS®, SlimSMA™
Schottky
60V
5A (DC)
470mV @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
540pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 150°C
B340A-M3/5AT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 3A DO214AC
3,418
-
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
NSR20204NXT5G
ON Semiconductor
DIODE SCHOTTKY 20V 2A 2DSN
3,474
Automotive, AEC-Q101
Schottky
20V
2A (DC)
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
28ns
80µA @ 20V
75pF @ 2V, 1MHz
Surface Mount
2-XDFN
2-DSN (1x.60)
150°C (Max)
MUR305S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7,866
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,352
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
2,214
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,428
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
S8GC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A DO214AB
3,400
-
Standard
400V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8JC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A DO214AB
4,464
-
Standard
600V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8KC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A DO214AB
8,262
-
Standard
800V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8MC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A DO214AB
4,986
-
Standard
-
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
CRF02(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 800V 500MA S-FLAT
4,338
-
Standard
800V
500mA
3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
50µA @ 800V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CUS15I30A(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A US-FLAT
7,326
-
Schottky
30V
1.5A
460mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 30V
50pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
150°C (Max)
RGL34BHE3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213
4,104
SUPERECTIFIER®
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34JHE3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213
7,848
SUPERECTIFIER®
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34AHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA
3,598
SUPERECTIFIER®
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34BHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213
5,796
SUPERECTIFIER®
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34DHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213
3,726
SUPERECTIFIER®
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34GHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213
5,058
SUPERECTIFIER®
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
RGL34JHE3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213
6,372
SUPERECTIFIER®
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C