整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 505/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204 |
2,358 |
|
Automotive, AEC-Q101 | Standard | 4000V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 5A PMDS |
4,662 |
|
- | Schottky | 30V | 5A | 510mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AB |
6,786 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A (DC) | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
7,488 |
|
eSMP® | Schottky | 45V | 10A | 720mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 45V | 270pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |
8,244 |
|
Automotive, AEC-Q101 | Standard | 100V | 2.4A (DC) | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 100V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
2,376 |
|
Automotive, AEC-Q101 | Standard | 200V | 2.4A (DC) | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.4A TO277A |
3,168 |
|
Automotive, AEC-Q101 | Standard | 400V | 2.4A (DC) | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 400V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
5,454 |
|
Automotive, AEC-Q101 | Standard | 600V | 2.4A (DC) | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 400V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |
3,960 |
|
Automotive, AEC-Q101 | Standard | 100V | 2.4A (DC) | 1.05V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 100V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
6,120 |
|
Automotive, AEC-Q101 | Standard | 200V | 2.4A (DC) | 1.05V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.4A TO277A |
5,364 |
|
Automotive, AEC-Q101 | Standard | 400V | 2.4A (DC) | 920mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 400V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
2,682 |
|
Automotive, AEC-Q101 | Standard | 600V | 2.4A (DC) | 920mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 600V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 5K |
2,340 |
|
- | Schottky | 100V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 5K |
6,462 |
|
- | Schottky | 100V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDS |
3,150 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
|
|
Sanken |
DIODE GEN PURP 800V 1A AXIAL |
7,794 |
|
- | Standard | 800V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 1.5KV 500MA AXIAL |
4,248 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1500V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Bourns |
DIODE GEN PURP 1.5KV 1A 1408 |
8,064 |
|
- | Standard | 1500V | 1A | 6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 1500V | - | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 800MA SOD57 |
2,682 |
|
- | Standard | 1400V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.2KV 2A SOD57 |
4,788 |
|
- | Avalanche | 1200V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SOD57 |
8,460 |
|
- | Avalanche | 600V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.4A SOD57 |
4,608 |
|
- | Avalanche | 400V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.9A SOD57 |
2,214 |
|
- | Avalanche | 100V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.25A SOD57 |
3,436 |
|
- | Avalanche | 400V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SOD57 |
7,326 |
|
- | Avalanche | 600V | 1.5A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
7,524 |
|
- | Avalanche | 800V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 20pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.2KV 2A SOD57 |
7,110 |
|
- | Avalanche | 1200V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SOD57 |
2,322 |
|
- | Avalanche | 600V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.4A SOD57 |
3,526 |
|
- | Avalanche | 400V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.9A SOD57 |
4,320 |
|
- | Avalanche | 100V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |