整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 510/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE SCHOTTKY 30V 1A SJP |
3,204 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 125°C |
|
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|
Sanken |
DIODE SCHOTTKY 40V 1A SJP |
6,642 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
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|
Sanken |
DIODE SCHOTTKY 60V 1A SJP |
6,462 |
|
- | Schottky | 60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
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|
Sanken |
DIODE SCHOTTKY 90V 1A SJP |
5,040 |
|
- | Schottky | 90V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 1A SJP |
3,780 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 1.5A SJP |
7,488 |
|
- | Schottky | 60V | 1.5A | 700mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
4,572 |
|
- | Super Barrier | 60V | 5A | 520mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
7,704 |
|
- | Super Barrier | 60V | 5A | 520mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD |
5,292 |
|
- | Standard | 500V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
2,034 |
|
- | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDS |
8,487 |
|
- | Schottky | 30V | 1.5A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO213AB |
4,554 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
4,212 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
4,050 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA |
3,762 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214BA |
6,948 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
7,812 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214BA |
6,426 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AB |
8,604 |
|
- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
ON Semiconductor |
6A 200V ULTRA FAST RECTIFIER |
3,690 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
5,724 |
|
Automotive, AEC-Q101, SWITCHMODE™ | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A M-FLAT |
6,282 |
|
- | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1.4KV 500MA DO204AL |
8,064 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1400V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1.5KV 500MA DO204AL |
5,562 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1500V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1500V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1.6KV 500MA DO204AL |
5,130 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1600V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1.7KV 500MA DO204AL |
3,510 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1700V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1700V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
5,184 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
3,490 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3,114 |
|
- | Standard | 400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
8,352 |
|
- | Standard | 600V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |