整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 536/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SMC Diode Solutions |
PIV 60V IO 1A CHIP SIZE 40MIL SQ |
4,050 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 100V IO 1A CHIP SIZE 40MIL S |
5,616 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 5A DO201AD |
2,412 |
|
- | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO214AB |
3,240 |
|
Automotive, AEC-Q101 | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A M-FLAT |
6,570 |
|
- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A DO214AB |
8,730 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 600V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 8A 5DFN |
6,876 |
|
Automotive, AEC-Q101 | Schottky | 120V | 8A | 880mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AB |
5,238 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 4.3A TO277A |
3,690 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 4.3A | 590mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.9mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO201AD |
8,424 |
|
- | Schottky | 100V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A DO201AD |
5,472 |
|
- | Schottky | 100V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.4A TO277A |
7,182 |
|
eSMP® | Avalanche | 800V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
5,256 |
|
eSMP® | Avalanche | 200V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
2,898 |
|
eSMP® | Avalanche | 400V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 500MA SOT23 |
4,698 |
|
- | Schottky | 40V | 500mA (DC) | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 10V | 50pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
3,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 50V 15A R-6 |
7,974 |
|
- | Schottky | 50V | 15A | 680mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 50V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 60V 15A R-6 |
5,508 |
|
- | Schottky | 60V | 15A | 680mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 60V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
PIV 50V IO 1MA CHIP SIZE 17.5MIL |
3,456 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A SMB |
3,042 |
|
- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6,966 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE SBR 20V 8A POWERDI5 |
8,100 |
|
- | Super Barrier | 20V | 8A | 450mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 20V 8A POWERDI5 |
2,088 |
|
- | Super Barrier | 20V | 8A | 450mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
8,892 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 100V 12A TO220AC |
7,686 |
|
- | Schottky | 100V | 12A | 750mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 200V 15A TO220AC |
7,722 |
|
- | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 200V 15A ITO220AC |
2,196 |
|
- | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A DO201AD |
6,930 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
8,262 |
|
- | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
PIV 200V IO 1A CHIP SIZE 40MIL S |
6,318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |