整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 552/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
6,498 |
|
TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 200°C (Max) |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
4,176 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
4,230 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
4,266 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL |
8,514 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
4,752 |
|
- | Avalanche | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
5,472 |
|
- | Avalanche | 1000V | 3A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | 140°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
7,704 |
|
- | Avalanche | 600V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
3,654 |
|
- | Avalanche | 400V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
6,498 |
|
- | Avalanche | 200V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
4,392 |
|
- | Avalanche | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
2,088 |
|
- | Avalanche | 1000V | 3A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | 140°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
7,002 |
|
- | Avalanche | 400V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
6,372 |
|
- | Avalanche | 200V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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|
Diodes Incorporated |
SBR DIODE PDI5 T&R 5K |
6,696 |
|
Automotive, AEC-Q101, SBR® | Super Barrier | 50V | 15A | 520mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500µA @ 50V | 400pF @ 25V | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AB |
5,778 |
|
- | Standard | 400V | 10A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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ON Semiconductor |
DIODE STD REC SOT223 |
6,012 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 60V 25A 8PDFN |
4,212 |
|
- | Standard | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 400V TO220AC |
4,986 |
|
- | Standard | 400V | - | 1.51V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 10A TO220AB |
3,960 |
|
Automotive, AEC-Q101 | Schottky | 40V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 10A TO220AC |
7,830 |
|
Automotive, AEC-Q101 | Schottky | 40V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 8A ITO220AC |
2,844 |
|
- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A ITO220AC |
8,568 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
7,434 |
|
SUPERECTIFIER® | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A SMC |
7,974 |
|
FRED Pt® | Standard | 600V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 43ns | 3µA @ 600V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A TO277A |
5,184 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A TO277A |
8,298 |
|
Automotive, AEC-Q101, eSMP® | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 2A PMDS |
6,336 |
|
- | Schottky | 30V | 2A | 395mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
8,388 |
|
eSMP® | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |
7,470 |
|
eSMP® | Avalanche | 1000V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |