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整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 73/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
UF5408-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 3A DO201AD
244,740
-
Standard
1000V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
36pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UF5407-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 3A DO201AD
36,372
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
36pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
BYV26E-TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1000V 1A SOD57
815,988
-
Avalanche
1000V
1A
2.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
1N4007G
ON Semiconductor
DIODE GEN PURP 1KV 1A DO41
377,994
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
BYV26E-TAP
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1000V 1A SOD57
372,936
-
Avalanche
1000V
1A
2.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
1N4004G
ON Semiconductor
DIODE GEN PURP 400V 1A DO41
277,506
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
1N4003G
ON Semiconductor
DIODE GEN PURP 200V 1A DO41
255,024
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
1N4001G
ON Semiconductor
DIODE GEN PURP 50V 1A DO41
246,510
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
EGF1THE3/5CA
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.3KV 1A DO214BA
93,138
SUPERECTIFIER®
Standard
1300V
1A
3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1300V
-
Surface Mount
DO-214BA
DO-214BA (GF1)
-55°C ~ 150°C
1N4005G
ON Semiconductor
DIODE GEN PURP 600V 1A DO41
99,558
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
FDH333
ON Semiconductor
DIODE GEN PURP 125V 200MA DO35
97,878
-
Standard
125V
200mA
1.15V @ 300mA
Small Signal =< 200mA (Io), Any Speed
-
3nA @ 125V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N3595
ON Semiconductor
DIODE GEN PURP 150V 200MA DO35
108,846
-
Standard
150V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
3µs
1nA @ 125V
8pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
BYW36-TAP
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 2A SOD57
76,446
-
Avalanche
600V
2A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
1N4006G
ON Semiconductor
DIODE GEN PURP 800V 1A AXIAL
96,162
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
1N4002G
ON Semiconductor
DIODE GEN PURP 100V 1A DO41
58,680
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
FSV12120V
ON Semiconductor
DIODE SCHOTTKY 120V 12A TO277-3
252,696
Automotive, AEC-Q101
Schottky
120V
12A
790mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 150°C
SS3H10-E3/9AT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 3A DO214AB
302,280
-
Schottky
100V
3A
800mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-65°C ~ 175°C
ES3AB-13-F
Diodes Incorporated
DIODE GEN PURP 50V 3A SMB
200,088
-
Standard
50V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
BYV27-100-TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 100V 2A SOD57
195,576
-
Avalanche
100V
2A
1.07V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
ZHCS750TA
Diodes Incorporated
DIODE SCHOTTKY 40V 750MA SOT23-3
160,134
-
Schottky
40V
750mA (DC)
490mV @ 750mA
Fast Recovery =< 500ns, > 200mA (Io)
12ns
100µA @ 30V
25pF @ 25V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
125°C (Max)
B370-13-F
Diodes Incorporated
DIODE SCHOTTKY 70V 3A SMC
81,762
-
Schottky
70V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 70V
100pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 125°C
CMPD6001 TR
Central Semiconductor Corp
DIODE GEN PURP 75V 250MA SOT23
44,514
-
Standard
75V
250mA
1.1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
500pA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
UPS5817E3/TR7
Microsemi
DIODE SCHOTTKY 20V 1A POWERMITE1
28,122
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 150°C
DFLS1150Q-7
Diodes Incorporated
DIODE SCHOTTKY 150V POWERDI123
205,680
Automotive, AEC-Q101
Schottky
150V
1A
820mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
28pF @ 5V, 1MHz
Surface Mount
POWERDI®123
PowerDI™ 123
-55°C ~ 175°C
RGP02-12E-E3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 500MA DO204
23,904
SUPERECTIFIER®
Standard
1200V
500mA
1.8V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 1200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
CMPSH-3 TR
Central Semiconductor Corp
DIODE SCHOTTKY 30V 100MA SOT23
23,832
-
Schottky
30V
100mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
S5J-E3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 5A DO214AB
234,276
-
Standard
600V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
STTH3R02S
STMicroelectronics
DIODE GEN PURP 200V 3A SMC
38,994
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Surface Mount
DO-214AB, SMC
SMC
175°C (Max)
VSSB310-E3/52T
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 1.9A DO214AA
211,266
TMBS®
Schottky
100V
1.9A (DC)
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
230pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-40°C ~ 150°C
FDH300A
ON Semiconductor
DIODE GEN PURP 125V 200MA DO35
97,554
-
Standard
125V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1nA @ 125V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)