整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 78/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 1A DO41 |
25,506 |
|
- | Schottky | 20V | 1A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 15A DO214AB |
17,574 |
|
- | Standard | 1000V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 100V 15A R-6 |
26,412 |
|
- | Schottky | 100V | 15A | 830mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 100V 5A DPAK |
41,802 |
|
SWITCHMODE™ | Schottky | 100V | 5A | 710mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
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STMicroelectronics |
DIODE SCHOTTKY 60V 3A SMBFLAT |
46,554 |
|
- | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat | 150°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3A DO214AB |
52,170 |
|
- | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
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|
Micro Commercial Co |
DIODE GEN PURP 100V 6A DO201AD |
13,026 |
|
- | Standard | 100V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE GEN PURP 600V 6A R6 |
13,056 |
|
- | Standard | 600V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | 70pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO277A |
53,784 |
|
- | Schottky | 60V | 10A | 540mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE GEN PURP 100V 10A R6 |
37,890 |
|
- | Standard | 100V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE RECT 100V 20A DPAK |
23,274 |
|
- | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
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|
Diodes Incorporated |
DIODE SBR 65V 20A TO252 |
24,114 |
|
Automotive, AEC-Q101 | Super Barrier | 65V | 20A | 630mV @ 20A | Small Signal =< 200mA (Io), Any Speed | - | 400µA @ 65V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SCHOTTKY 100V 3A POWERDI5 |
37,812 |
|
Automotive, AEC-Q101 | Schottky | 100V | 3A | 840mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
63,468 |
|
- | Avalanche | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
39,402 |
|
- | Avalanche | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
81,570 |
|
- | Avalanche | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Central Semiconductor Corp |
DIODE GEN PURP 600V 5A SMC |
21,792 |
|
- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 1µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |
207,222 |
|
eSMP® | Schottky | 40V | 10A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
171,066 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
93,174 |
|
- | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
95,964 |
|
- | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
70,824 |
|
- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
44,340 |
|
- | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
28,458 |
|
- | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
24,258 |
|
- | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
21,702 |
|
- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
14,496 |
|
- | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 10A R6 |
12,558 |
|
- | Standard | 400V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SBR 60V 8A POWERDI5 |
15,708 |
|
SBR® | Super Barrier | 60V | 8A | 530mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 600µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE RECT 60V 20A POWERFLAT |
26,772 |
|
- | FERD (Field Effect Rectifier Diode) | 60V | 20A | 510mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |