整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 929/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE GEN PURP 600V 6A TO252-3 |
5,058 |
|
DIODESTAR™ | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | -65°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 600V 6A TO252-3 |
6,624 |
|
DIODESTAR™ | Standard | 600V | 6A | 2.6V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | -65°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 30V 300MA SOD923 |
4,086 |
|
- | Schottky | 30V | 300mA (DC) | 530mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 22pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923 | 150°C (Max) |
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO263-3 |
7,398 |
|
- | Standard | 1200V | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 150°C |
|
|
Infineon Technologies |
DIODE GEN PURP 600V 41A TO263-3 |
6,264 |
|
- | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GEN PURP 600V 21A TO22FP |
5,868 |
|
- | Standard | 600V | 21A | 2.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 5A TO220AC |
5,958 |
|
- | Standard | 600V | 5A | 1.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 5A TO220F |
2,340 |
|
- | Standard | 600V | 5A | 1.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 17.5A TO252 |
6,264 |
|
Zero Recovery™ | Silicon Carbide Schottky | 1200V | 17.5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
Sensata-Crydom |
MODULE POWER |
2,556 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 2A DO214AA |
3,996 |
|
- | Standard | 400V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 10µA @ 400V | - | - | - | - | -55°C ~ 150°C |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 5A CPD |
2,232 |
|
- | Schottky | 40V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPD | 150°C (Max) |
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 30V 100MA USSMINI |
5,958 |
|
- | Schottky | 30V | 100mA | 580mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.3ns | 2µA @ 30V | 3pF @ 10V, 1MHz | Surface Mount | SOD-923 | USSMINI2-F2-B | 125°C (Max) |
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 20V 1A MINI2 |
6,750 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 20V | 20pF @ 10V, 1MHz | Surface Mount | SOD-123F | Mini2-F4-B | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 500MA 2DSN |
4,248 |
|
- | Schottky | 30V | 500mA (DC) | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 30V | - | Surface Mount | 2-XDFN | 2-DSN (1x.60) | 150°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO220FP |
2,808 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220FP |
6,480 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220FP |
6,480 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220FP |
5,472 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220FP |
4,662 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC |
4,355 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC |
2,520 |
|
- | Standard | 200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7,596 |
|
- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
2,358 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
8,352 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
4,554 |
|
- | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
4,824 |
|
- | Standard | 1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
5,328 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
8,550 |
|
- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 80A TO247AC |
7,632 |
|
- | Standard | 1000V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |