整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 945/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
7,866 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
6,984 |
|
- | Standard | 400V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
5,634 |
|
- | Standard | 400V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO214AC |
7,002 |
|
- | Schottky | 30V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AB |
3,258 |
|
- | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
8,118 |
|
- | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 100V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
4,032 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
5,616 |
|
- | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
8,820 |
|
- | Standard | 100V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 100V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
6,012 |
|
- | Standard | 200V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
6,714 |
|
- | Standard | 400V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
8,694 |
|
- | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
3,366 |
|
- | Standard | 800V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
2,106 |
|
- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
8,334 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
4,950 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 600V 50A TO247 |
7,452 |
|
- | Standard | 600V | 50A | 2.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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|
Bourns |
DIODE SCHOTTKY 40V 1A SMA |
8,280 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
|
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Bourns |
DIODE SCHOTTKY 60V 1A SMA |
3,654 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
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Bourns |
DIODE SCHOTTKY 40V 2A SMA |
137,358 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
|
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|
Bourns |
DIODE SCHOTTKY 40V 3A SMA |
6,138 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
|
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Bourns |
DIODE SCHOTTKY 40V 2A 1206 |
4,644 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | Chip, Concave Terminals | 1206 | -55°C ~ 125°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220-2 |
4,518 |
|
FRED Pt® | Standard | 600V | 8A | 3.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 99A |
5,778 |
|
- | Silicon Carbide Schottky | 1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 68A D3PAK |
5,004 |
|
- | Silicon Carbide Schottky | 1200V | 68A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1135pF @ 0V, 1MHz | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 68A |
7,560 |
|
- | Silicon Carbide Schottky | 1200V | 68A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1135pF @ 0V, 1MHz | - | - | - | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 36A TO247 |
2,988 |
|
- | Silicon Carbide Schottky | 1200V | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
|
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|
Powerex Inc. |
MOD POW-R-BRIK 740A 800V |
7,002 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Powerex Inc. |
MOD POW-R-BRIK 800A 600V |
3,510 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Powerex Inc. |
DIODE GEN PURP 600V 627A MODULE |
8,442 |
|
- | Standard | 600V | 627A | 2.8V @ 1000A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2mA @ 600V | - | Chassis Mount | Module | Module | - |