整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 960/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
8,838 |
|
- | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6,372 |
|
- | Standard | 75V | 200mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 150MA DO34 |
3,114 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AG, DO-34, Axial | DO-34 | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE SWITCHING |
5,814 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,976 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 4KV 100MA AXIAL |
7,020 |
|
- | Standard | 4000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 4000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 5KV 100MA AXIAL |
6,012 |
|
- | Standard | 5000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 5000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 10KV 100MA SAXIAL |
3,474 |
|
- | Standard | 10000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
8,262 |
|
- | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 3A D5B |
3,852 |
|
- | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
8,892 |
|
- | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 75V 1A AXIAL |
7,866 |
|
- | Standard | 75V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 75V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 125V 1A AXIAL |
7,146 |
|
- | Standard | 125V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 125V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 125°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 3A B-MELF |
5,238 |
|
- | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
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Microsemi |
DIODE SCHOTTKY 20V 3A B-MELF |
6,516 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
|
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Microsemi |
DIODE SCHOTTKY 30V 3A B-MELF |
6,372 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 850MA AXIAL |
2,610 |
|
- | Standard | 50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2A G-MELF |
2,592 |
|
- | Standard | 100V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | SQ-MELF, G | G-MELF (D-5C) | -65°C ~ 155°C |
|
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Microsemi |
DIODE GEN PURP 225V 400MA DO213 |
7,740 |
|
- | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
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Microsemi |
DIODE GEN PURP 300V 400MA DO35 |
3,564 |
|
- | Standard | 300V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 300V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 500V 400MA DO35 |
4,446 |
|
- | Standard | 500V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 500V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 990V 1A A-MELF |
4,392 |
|
- | Standard | 990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 880V 1.4A A-MELF |
6,714 |
|
- | Standard | 880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1.1KV 1.4A AXIAL |
7,506 |
|
- | Standard | 1100V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 75V 300MA D5D |
3,024 |
|
- | Standard | 75V | 300mA | 800mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500µA @ 75V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 20V 200MA DO35 |
8,856 |
|
- | Schottky | 20V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 20V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
|
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|
Microsemi |
DIODE SCHOTTKY 30V 200MA DO35 |
7,686 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 30V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
|
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|
Microsemi |
DIODE SCHOTTKY |
3,580 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Microsemi |
DIODE SCHOTTKY |
7,938 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Microsemi |
DIODE SCHOTTKY 20V 500MA DO35 |
5,202 |
|
- | Schottky | 20V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | 60pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |