內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 1299/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
6,354 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
4,194 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
8,244 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC PSRAM 32M PARALLEL 48TFBGA |
5,778 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 32Mb (2M x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC PSRAM 32M PARALLEL 48TFBGA |
3,438 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 32Mb (2M x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
3,186 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
2,214 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
2,700 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
5,958 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
6,624 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-VFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 8G PARAL 168VFBGA |
3,474 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM) | Parallel | 208MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 168TFBGA |
5,652 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 8Gb (256M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 168-TFBGA | 168-TFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC FLASH 32G MMC 100LBGA |
5,958 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC 100LBGA |
3,114 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 8G PARAL 168VFBGA |
4,248 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM) | Parallel | 208MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 168TFBGA |
955 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 8Gb (256M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 168-TFBGA | 168-TFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC FLASH 128G MMC 100LBGA |
3,690 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 256G MMC 100LBGA |
6,894 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 32G MMC 100LBGA |
2,010 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC 100LBGA |
3,798 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
3,618 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
7,218 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
4,176 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
8,298 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
2,070 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
6,678 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-VFBGA | 60-FBGA (8x12.5) |
|
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|
Maxim Integrated |
IC EPROM 1K 1WIRE 4WLP |
4,770 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 1Kb (128 x 8) | 1-Wire® | - | - | - | 2.8V ~ 6V | -40°C ~ 85°C (TA) | Surface Mount | 4-UFBGA, WLBGA | 4-WLP (1.62x0.93) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 168WFBGA |
2,178 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 4Gb (128M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 168WFBGA |
5,904 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 4Gb (128M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 168WFBGA |
請求報價 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 4Gb (128M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |