內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 927/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
IC EEPROM 8K SPI 3MHZ 8SOIC |
6,516 |
|
- | Non-Volatile | EEPROM | EEPROM | 8Kb (1K x 8, 512 x 16) | SPI | 3MHz | - | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
ON Semiconductor |
IC EEPROM 2K I2C 1MHZ 8SOIC |
2,214 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | I²C | 1MHz | 5ms | 400ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
Parallax |
IC EEPROM 16K I2C 400KHZ 8DIP |
3,510 |
|
- | Non-Volatile | EEPROM | EEPROM | 16Kb (2K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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|
Parallax |
IC EEPROM 2K 8DIP |
2,106 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | - | - | - | - | 2.5V ~ 5.5V | - | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Parallax |
IC EEPROM 4K SPI 2MHZ 8SOIC |
5,382 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 2MHz | 6ms | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Parallax |
IC EEPROM 256K I2C 400KHZ 8DIP |
2,088 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
6,408 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 200MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-XFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
5,724 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
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|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
4,248 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
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|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 66TSOP |
4,446 |
|
- | Volatile | DRAM | SDRAM - DDR | 1Gb (64M x 16) | Parallel | 167MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
|
|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 66TSOP |
2,304 |
|
- | Volatile | DRAM | SDRAM - DDR | 1Gb (64M x 16) | Parallel | 167MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
|
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|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 78FBGA |
5,148 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (256M x 4) | Parallel | 667MHz | - | - | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-FBGA | 78-FBGA (9.5x11.5) |
|
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|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 96FBGA |
4,086 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | - | - | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-FBGA | 96-FBGA (9x15.5) |
|
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|
Micron Technology Inc. |
IC FLASH 64G PARALLEL 48TSOP I |
7,524 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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|
Micron Technology Inc. |
IC FLASH 32G PARALLEL 48TSOP |
6,120 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
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|
Micron Technology Inc. |
IC FLASH 16G PARALLEL 48TSOP I |
8,244 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 16Gb (2G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
3,096 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-XFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 256M PARALLEL 144UBGA |
4,428 |
|
- | Volatile | DRAM | DRAM | 256Mb (16M x 16) | Parallel | 200MHz | - | - | 1.7V ~ 1.95V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
5,886 |
|
- | Volatile | DRAM | DRAM | 288Mb (8M x 36) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
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|
Microchip Technology |
IC EEPROM 2K I2C 400KHZ |
122,797 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | I²C | 400kHz | 5ms | 900ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-Mini Map (2x3) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
7,830 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90LFBGA |
3,078 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |
|
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|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
4,716 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 167MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (10x12.5) |
|
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|
STMicroelectronics |
IC EEPROM 256K SPI 20MHZ 8SO |
1,967 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 20MHz | 5ms | - | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 63FBGA |
8,424 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (512M x 4) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 63-FBGA | 63-FBGA (9x11.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 63FBGA |
5,436 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (512M x 4) | Parallel | 267MHz | 15ns | 500ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 63-FBGA | 63-FBGA (9x11.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
3,258 |
|
- | Volatile | DRAM | DRAM | 288Mb (16M x 18) | Parallel | 400MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
2,100 |
|
- | Volatile | DRAM | DRAM | 288Mb (16M x 18) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 288M PARALLEL 144UBGA |
5,328 |
|
- | Volatile | DRAM | DRAM | 288Mb (32M x 9) | Parallel | 300MHz | - | 20ns | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
|
|
|
Micron Technology Inc. |
IC FLASH 32G PARALLEL 48TSOP I |
4,284 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |