晶體管-FET，MOSFET-RF
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-RF
記錄 3,043
頁面 7/102
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 晶體管類型 | 頻率 | 增益 | 電壓-測試 | 額定電流（安培） | 噪聲系數 | 當前-測試 | 功率-輸出 | 電壓-額定 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ampleon |
RF FET LDMOS 100V 17DB SOT1121A |
6,534 |
|
- | LDMOS | 1.3GHz | 17dB | 50V | - | - | 100mA | 250W | 100V | SOT-1121A | LDMOST |
|
|
|
Ampleon |
RF FET LDMOS 65V 14.8DB SOT12751 |
6,156 |
|
- | LDMOS (Dual), Common Source | 2.5GHz ~ 2.69GHz | 14.8dB | 28V | - | - | 400mA | 150W | 65V | SOT1275-1 | SOT-1275-1 |
|
|
|
Ampleon |
RF FET LDMOS 104V 21DB SOT539A |
6,948 |
|
- | LDMOS | 860MHz | 21dB | 50V | - | - | 1.3A | 250W | 104V | SOT539A | SOT539A |
|
|
|
Ampleon |
RF FET LDMOS 104V 21DB SOT539B |
367 |
|
- | LDMOS | 860MHz | 21dB | 50V | - | - | 1.3A | 250W | 104V | SOT539B | SOT539B |
|
|
|
NXP |
FET RF 2CH 110V 130MHZ NI-1230 |
6,048 |
|
- | LDMOS (Dual) | 130MHz | 26dB | 50V | - | - | 150mA | 1000W | 110V | NI-1230S-4 GW | NI-1230S-4 GULL |
|
|
|
NXP |
FET RF 100V 1.03GHZ NI-780 |
4,518 |
|
- | LDMOS | 1.03GHz | 20.3dB | 50V | - | - | 100mA | 275W | 100V | SOT-957A | NI-780H-2L |
|
|
|
Ampleon |
RF FET LDMOS 65V 19DB SOT502B |
4,752 |
|
- | LDMOS | 2.11GHz ~ 2.17GHz | 19dB | 28V | - | - | 2A | 55W | 65V | SOT-502B | SOT502B |
|
|
|
Ampleon |
RF FET LDMOS 104V 17DB SOT539B |
5,804 |
|
- | LDMOS (Dual), Common Source | 600MHz ~ 700MHz | 17dB | 50V | - | - | 600mA | 750W | 104V | SOT539B | SOT539B |
|
|
|
Ampleon |
RF FET LDMOS 65V 20DB SOT502D |
283 |
|
- | LDMOS | 1.03GHz ~ 1.09GHz | 20dB | 28V | 49A | - | 100mA | 200W | 65V | SOT-502D | LDMOST |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440206 |
6,282 |
|
GaN | HEMT | 0 ~ 4GHz | 11dB | 50V | 8.7A | - | 600mA | 116W | 125V | 440206 | 440206 |
|
|
|
Ampleon |
RF FET HEMT 150V 12DB SOT467B |
7,182 |
|
- | HEMT | 3GHz | 12dB | 50V | - | - | 330mA | 100W | 150V | SOT467B | LDMOST |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440117 |
5,400 |
|
GaN | HEMT | 1.4GHz | 14.5dB | 50V | 24A | - | 800mA | 900W | 125V | 440117 | 440117 |
|
|
|
Ampleon |
RF FET LDMOS 65V 10DB SOT539A |
453 |
|
- | LDMOS (Dual), Common Source | 3.5GHz | 10dB | 32V | - | - | 200mA | 320W | 65V | SOT539A | SOT539A |
|
|
|
ON Semiconductor |
RF MOSFET N-CH JFET 10V SOT23 |
105,648 |
|
Automotive, AEC-Q101 | N-Channel JFET | - | 12dB | 10V | 60mA | - | 10mA | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
|
Toshiba Semiconductor and Storage |
JFET N-CH SOT23 |
70,608 |
|
- | N-Channel JFET | 1kHz | - | 10V | - | 1dB | 500µA | - | - | TO-236-3, SC-59, SOT-23-3 | SC-59 |
|
|
|
ON Semiconductor |
JFET N-CH 25V 30MA SOT23 |
29,238 |
|
Automotive, AEC-Q101 | N-Channel JFET | - | - | - | 30mA | - | - | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10 |
14,076 |
|
- | LDMOS | 500MHz | 17dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
|
|
|
NXP |
FET RF 68V 960MHZ TO270-2 |
14,736 |
|
- | LDMOS | 960MHz | 18dB | 28V | - | - | 125mA | 10W | 68V | TO-270AA | TO-270-2 |
|
|
|
Ampleon |
RF FET LDMOS 65V 16DB 12VDFN |
15,720 |
|
- | LDMOS | 2.14GHz | 16dB | 28V | - | - | 55mA | 1W | 65V | 12-VDFN Exposed Pad | 12-HVSON (6x4) |
|
|
|
STMicroelectronics |
TRANSISTOR RF POWERSO-10 |
12,444 |
|
- | LDMOS | 945MHz | 16.5dB | 28V | 2.5A | - | 100mA | 18W | 65V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
|
|
|
Ampleon |
RF FET LDMOS 65V 32.3DB SOT12121 |
7,500 |
|
- | LDMOS (Dual) | 2.17GHz | 32.3dB | 28V | - | - | - | 2W | 65V | SOT-1212-3 | 16-HSOP |
|
|
|
STMicroelectronics |
FET RF 65V 945MHZ PWRSO10 |
10,548 |
|
- | LDMOS | 945MHz | 16.5dB | 28V | 2.5A | - | 100mA | 18W | 65V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
|
|
|
Ampleon |
BLM10D2327-40AB/SOT1462/REELDP |
14,772 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Ampleon |
RF MOSFET LDMOS SOT975C |
7,020 |
|
- | LDMOS | 3.4GHz ~ 3.8GHz | - | - | - | - | - | 10W | 28V | SOT-975C | CDFM2 |
|
|
|
Cree/Wolfspeed |
RF DISCRETE |
6,600 |
|
* | - | - | - | - | - | - | - | - | - | Die | Die |
|
|
|
NXP |
FET RF 110V 220MHZ TO-270-4 |
17,328 |
|
- | LDMOS | 220MHz | 25dB | 50V | - | - | 450mA | 150W | 110V | TO-270AB | TO-270 WB-4 |
|
|
|
STMicroelectronics |
TRANSISTOR RF POWER N-CH 80V 9A |
7,392 |
|
- | LDMOS | 960MHz | 17.5dB | 28V | 9A | - | 300mA | 59W | 80V | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | PowerSO-10RF (Straight Lead) |
|
|
|
Cree/Wolfspeed |
RF DISCRETE |
7,488 |
|
* | - | - | - | - | - | - | - | - | - | Die | Die |
|
|
|
Ampleon |
BLC9H10XS-300P/SOT1273/TRAYDP |
6,972 |
|
- | LDMOS | 600MHz ~ 960MHz | 21dB | 50V | 1.4µA | - | 600mA | 300W | 108V | SOT1273-1 | SOT1273-1 |
|
|
|
STMicroelectronics |
FET RF 80V 2GHZ M243 |
7,470 |
|
- | LDMOS | 2GHz | 13.9dB | 28V | 9A | - | 400mA | 45W | 80V | M243 | M243 |