Taiwan Semiconductor Corporation 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Taiwan Semiconductor Corporation
記錄 5,388
頁面 92/180
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
6,282 |
|
Automotive, AEC-Q101 | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO201AD |
7,578 |
|
Automotive, AEC-Q101 | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO201AD |
4,680 |
|
Automotive, AEC-Q101 | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
4,842 |
|
Automotive, AEC-Q101 | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO201AD |
6,012 |
|
- | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
3,654 |
|
- | Standard | 400V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
3,474 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 6A DO201AD |
4,158 |
|
- | Standard | 150V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A DO201AD |
3,366 |
|
- | Standard | 200V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 150V DO-214AB |
8,964 |
|
- | Schottky | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
6,480 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AB |
8,802 |
|
- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
3,438 |
|
Automotive, AEC-Q101 | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A DO214AB |
8,046 |
|
- | Standard | 100V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO214AB |
4,806 |
|
- | Standard | 200V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
6,318 |
|
- | Standard | 800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO214AB |
5,886 |
|
- | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO214AB |
2,952 |
|
Automotive, AEC-Q101 | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AB |
8,676 |
|
- | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AB |
3,454 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AB |
8,424 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 6A DO201AD |
7,254 |
|
Automotive, AEC-Q101 | Standard | 150V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A DO201AD |
3,006 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 4A DO201AD |
6,444 |
|
Automotive, AEC-Q101 | Standard | 300V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2,100 |
|
Automotive, AEC-Q101 | Standard | 400V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
4,536 |
|
- | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
7,920 |
|
- | Standard | 400V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
5,760 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2,520 |
|
- | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
8,244 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |