Diodes Hall sensors reduce power consumption and improve accuracy

     Diodes Incorporated introduces a family of micropower eight-bit resolution Hall effect sensors for contactless switches in portable consumer electronics, home appliances and industrial equipment, including the AH8500, AH8501, AH8502 and AH8503.

     With a supply voltage range of 1.6V to 3.6V and a magnetic field range of ±400G, the new sensor's operating mode and sampling rate reduce current consumption to the micro-power level. The AH8500 and the more accurate AH8501 have an enable pin and consume only 9μA of current in sleep mode, the device's default mode. Both devices generally consume only 12μA of current at a frequency of 20Hz; When the sampling rate reaches the maximum 7.14kHz, the current consumption is 1.16mA.

     The new product family also includes the AH8502 and AH8503, which are equipped with control pins and achieve a sampling rate of 24Hz in default mode, consuming only 13μA of current; If the control pin increases the sampling rate to 7.14kHz, the current consumption is 1.16mA.

     The highly accurate gain adjustment devices AH8501 and AH8503 minimize sample-to-sample variability and reduce the need for sensor calibration. Both products have a sensitivity accuracy of 3% at room temperature, and zero bias is less than 1% of the supply voltage.

     The new linear Hall effect sensor family features an internal analog-to-digital converter and a digital-to-analog converter, as well as a typical linear range of more than 99.7%, ensuring high linearity through external magnetic fields. Low input reference noise less than 0.36G, effectively minimize output fluctuations.

     These sensors typically offer high sensitivity from 2.25mV/G to 4.12mV/G over the full operating range of 1.6V to 3.6V, allowing designers to extend the field detection range or utilize magnets with lower magnetic field strength and lower cost. The chop-stabilized architecture and lower temperature coefficient help minimize output bias, offset, and internal stress effects, thereby improving stability and robustness over the full operating temperature range from -40ºC to +85ºC. The device also has a high electrostatic discharge capacity of 6kV.