New type of silicon carbide Schottky barrier diode reduces power loss in industrial equipment

     Toshiba Electronics Europe GmbH has enhanced its SiC diode portfolio with the introduction of 10 new 1200V Schottky Barrier diodes (sbd). The TRSxxx120Hx series includes five products in TO-247-2L packages and five TO-247 packages, enabling designers to improve the efficiency of industrial equipment, including photovoltaic inverters, electric vehicle charging stations and switching power supplies.

     By implementing an enhanced junction barrier Schottky (JBS) structure, the series achieves an extremely low forward voltage (VF) of only 1.27V (type). The incorporation of PiN-Schottky into the JBS structure reduces diode losses under high current conditions. The new series of TRS40N120H accepts 40A (Max) forward direct current (IF(DC)) and 270A (Max) non-repetitive peak forward inrush current (IFSM) with a maximum housing temperature (TC) of +175C for all devices.

     Combined with lower capacitive charge and leakage current, this product helps to improve system efficiency and simplify thermal design. For example, at 1200V reverse voltage (VR), the TRS20H120H diode in the TO-247-2L package provides a total capacitive charge (QC) of 109nC and reverse current (IR) of 2µa.