Rohm introduces the 650V GaN HEMT in a compact TOLL package with excellent heat dissipation

     ROHM introduced the 650V GaN hemt in a TOLL (TO-LeadLess) package with the newly developed GNP2070TD-Z. With a compact design and superior heat dissipation, the package offers high current capacity and superior switching performance. As a result, TOLL packaging is becoming increasingly popular in applications that require robust power processing, especially in industrial equipment and automotive systems. To this end, Rohm has partnered with ATX Semiconductor (Weihai) Co., LTD. (hereinafter referred to as ATX), a well-known OSAT (outsourced semiconductor assembly and testing) supplier, to outsource the packaging manufacturing.

     Improving the efficiency of motors and power supplies - which together account for a significant portion of global electricity consumption - has become a key challenge to achieving a decarbonized society. The power plant plays a vital role in improving efficiency. The use of advanced materials such as SiC (silicon carbide) and GaN is expected to drive significant improvements in power supply performance.

     ROHM began mass production of its first-generation 650V GaN HEMT in April 2023, followed by the introduction of a power-level ic that integrates the gate driver and 650V GaN HEMT in a single package. Now, Rohm has introduced a new product with a second-generation TOLL package element that complements its existing DFN8080 package lineup. This extension enhances the Rohm 650V GaN HEMT offering to meet the market demand for increasingly compact and efficient high-power applications.

     The latest product integrates a second-generation GaN-on-Si chip in the TOLL package, providing industry-leading performance in the key device metrics of connecting on-resistance and output charge (RDS (ON) × Qoss). This advance supports further miniaturization and increases the energy efficiency of power systems that require high voltage resistance and fast switching speeds.

     To enable mass production, Rohm uses its know-how and expertise in equipment design to improve through vertically integrated production systems to oversee product design and planning. As part of the partnership announced on December 10, 2024, front-end manufacturing is carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC) and back-end processing is handled by ATX.

     In addition, Rohm plans to collaborate with ATX to produce automotion-grade GaN devices. With the adoption of GaN devices in the automotive industry expected to accelerate in 2026, Rohm is committed to ensuring the rapid introduction of automogue-grade GaN solutions. By strengthening these strategic partnerships as well as in-house development efforts, Rohm will meet the growing demand for high-performance gallium nitride technology in next-generation automotive applications.