STt's new MDmesh MOSFET has a built-in fast recovery diode to increase the power density of the energy-efficient converter

     STMicroelectronics introduces the latest MDmesh™ Dk5 power MOSFET tube with the addition of a very High voltage (VHV) superjunction transistor with a fast recovery diode, which helps designers maximize the energy efficiency of various power conversion topologies. Includes Zero voltage switch (ZVS)LLC resonant converter.

     As an overjunction MOSFET tube, the rated voltage range of the new product is 950V to 1050V, and the technical parameters such as switching performance, on-resistance (RDS(ON)) and rated current flowing per unit area of silicon are better than the planar structure of ordinary MOSFET transistors. In power converters for high-power devices, such as telecommunications or data center servers with high bus voltage, industrial welders, plasma generators, high-frequency induction heaters and X-ray machines, ST's new products allow designers to improve application energy efficiency and reduce the number of parallel devices, thereby increasing power density.

     The internal fast recovery body diode enables the new product to improve the energy efficiency of the zero-voltage switch LLC resonant converter, meeting the application requirements for wide voltage input and high energy efficiency. Other types of bridge converters as well as battery charging boost DC/DC converters will also benefit from the new product's low loss and high dynamic performance. Compared to existing very high voltage MOSFETs with built-in fast recovery diodes, ST DK5 products offer the shortest reverse recovery time (trr), the lowest gate charge (Qg) and on-resistance RDS(ON) of MOSFETs, and good output input capacitance (Coss, Ciss) in superjunction products.