The new SPDT RF switch supports base station needs with increased capacity

     Toshiba Electronics Europe Ltd. has released a new RF SPDT switch in a compact package for applications such as telecommunications base stations, industrial equipment, Repeaters, consumer devices and transceivers.

     The company's new high-power RF SPDT switch (TCWA1225G) delivers 46dBm (@8dB PAR) input peak power. This was achieved by adopting its original CMOS process and optimizing the internal switching circuit. The CMOS process also reduces insertion losses to avoid reducing transmit power and receiver sensitivity. Thus, the insertion loss of the device is 0.6dB(type). @5GHz) - about 10% lower than competing products.

     The operating voltage is 3.3V and the power consumption is only 50μA. This new device can operate at ambient temperatures from -40 degrees Celsius to +95 degrees Celsius.

     The device is housed in a tiny WCSP measuring just 1.9mm x 1.9mm, making its footprint about 10% smaller than other devices. All important pads, including RF terminals, power and controls, are placed on the periphery of the device to simplify the PCB layout.

     As part of 5G deployment, telecom base stations have recently launched massive MIMO and multiple TX/RX antennas to provide ultra-high speed and ultra-large capacity radio communication services.

     Individual antennas increasingly contain complex signal transmission paths that require RF switching. This requires a compact package with low insertion losses and high input power in order to maintain or reduce antenna size.