Toshiba's new 150V n-channel power MOSFET features industry-leading low on-resistance and improved reverse recovery features
Toshiba Electronic components and storage Devices Corporation announced the launch of 150V N channel power MOSFET- "TPH9R00CQ5", which uses the latest generation of U-MOSX-H process, can be used for industrial equipment switching power supply, including data centers and communication base stations and other power applications.
TPH9R00CQ5 has the industry-leading 9.0mΩ (maximum) low drain-source on-resistance, which is about 42% lower than Toshiba's existing product "TPH1500CNH1". Meanwhile, compared with Toshiba's existing product "TPH9R00CQH4", the reverse recovery charge is reduced by about 74% and the reverse recovery time [5] is shortened by about 44%. The above indexes are the two key reverse recovery indexes that reflect the application performance of synchronous rectification.
The new product is oriented towards synchronous rectification applications [6], reducing the power loss of switching power supply and helping to improve system efficiency. In addition, compared with TPH9R00CQH, the new product reduces the peak voltage generated in the switching process, which helps to reduce the EMI of the power supply.
In addition, Toshiba also provides related tools to support switching power supply circuit design. In addition to the G0 SPICE model, which can quickly verify circuit function, a high-precision G2 SPICE model that can accurately reproduce circuit transient characteristics is now available.
With this product, Toshiba has also developed reference designs for "1kW unisolated Buck-Boost DC-DC Converter for communication equipment" and "3-phase multilevel inverter with MOSFET". The above reference design can be obtained from Toshiba's official website today. In addition, the new product can be used with the published "1kW full bridge DC-DC converter" reference design.
Applications
● Power supplies for industrial equipment, such as those used in data centers and communications base stations
● Switching power supply (high efficiency DC-DC converter, etc.)
Features
● Industry leading low on-resistance: RDS(ON) = 9.0mΩ (Max.) (VGS = 10V)
● Industry leading low reverse recovery charge: Qrr = 34nC (typical value) (-didr /dt = 100A/μs)
●Industry-leading fast reverse recovery time: trr = 40ns (typical value) (-didr /dt = 100A/μs)
● High junction temperature rating: Tch (Max.) = 175℃
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