Transphorm's GaN powers the first-ever integrated micro-inverter photovoltaic system

     Transphorm announced that its GaN platform powers the first integrated photovoltaic (PV) systems in the world, manufactured by DAH Solar Co., Ltd. The PV systems are utilized in the new SolarUnit product line by DAH Solar. DAH Solar accredits Transphorm’s GaN FETs with enabling it to produce solar panel systems that are smaller, lighter, and more reliable, as well as those that generate more power overall while consuming less energy.

     The design accomplishments continue to demonstrate Transphorm’s leadership position with its One Core GaN Platform, Crossing the Power Spectrum by reinforcing the company’s value proposition in the renewables industry, which at the moment represents a GaN TAM of more than $500 million.

     DAH Solar employs Transphorm's 150 mΩ and 70 mΩ GaN FETs in the design architecture of the SolarUnits (both DC-to-DC and DC-to-AC power stages). SolarUnits are available in three models with power capacities of 800 W, 920 W, and 1500 W and peak efficiencies of 97.16 percent, 97.2 percent, and 97.5 percent, and 1500 W and peak efficiencies of 97.16 percent, 97.2 percent, and 97.5 percent, respectively. GaN devices offer higher switching frequencies and power densities than silicon alternatives. Notably, the two FETs are offered in PQFN88 performance configurations that are compatible with widely-used gate drivers, which helped DAH Solar reduce its design time.

     The FET portfolio offered by Transphorm currently consists of devices rated at 650 V and 900 V, with 1200 V devices now in the development stage. These FETs have been qualified by both JEDEC and AEC-Q101, making them ideal choices for everything from power adapters and computer power supply units (PSUs) to extensive industrial UPSs and mobility systems for electric vehicles.