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Vishay introduces two SurfLight high-speed infrared light-emitting diodes

七月 24 2015 2015-07 Passive Components Vishay
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Vishay has introduced two SurfLight high-speed infrared light-emitting diodes, VSMY12850 and VSMY12940, in a small 3.2mm x 1.6mm x 1.1mm top-view SMD package, expanding its optoelectronics portfolio. Vishay Semiconductors 850nm VSMY12850 and 940nm VSMY12940 are based on Vishay's GaAIAs surface emitter chip technology with high radiation intensity and light power, as well as fast switching times.

     Vishay has introduced two SurfLight high-speed infrared light-emitting diodes, VSMY12850 and VSMY12940, in a small 3.2mm x 1.6mm x 1.1mm top-view SMD package, expanding its optoelectronics portfolio. Vishay Semiconductors 850nm VSMY12850 and 940nm VSMY12940 are based on Vishay's GaAIAs surface emitter chip technology with high radiation intensity and light power, as well as fast switching times.

     The device is housed in a transparent, spotless PCB substrate package with an embedded lens for surface mounting. The VSMY12850 and VSMY12940 are lower in height than devices in dome lenses and PLCC-2 packages, allowing for strong infrared illumination in space-constrained end products. When used in conjunction with Vishay's VCNL sensors, it is suitable for proximity and gesture detection applications, wake-up functions, optical switches, photoelectric circuit breakers, and infrared emitters and infrared touch screens for 3D gaming devices.

     The VSMY12850 and VSMY12940 can achieve extremely high radiation intensity of 16mW/sr at 70mA driving current, the switching time is only 10ns, and the forward voltage is 1.6V. The device is suitable for high-pulse current operation with current 1A, duration of 100μs, half intensity Angle of ±40°, and operating temperature from -40 ° C to +85 ° C. These devices have a moisture sensitivity rating (MSL) of level 3 for J-STD-020 and a storage life of 168 hours. Devices comply with RoHS and Vishay green standards and are halogen-free.

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