X-Fab and Soitec will collaborate on silicon carbide power devices in Texas, USA

     Pure wafer foundry X-Fab and Soitec will begin working together to provide Soitec's SmartSiC technology for the production of silicon carbide power devices at X-Fab's facility in Lubbock, Texas. The collaboration follows the successful completion of the evaluation phase, during which X-Fab Texas manufactured silicon carbide (SiC) power devices on 6-inch SmartSiC wafers. Soitec will provide X-Fab customers with access to SmartSiC substrates through a joint supply chain consignment model.

     With the rapid development of the global semiconductor industry, silicon carbide (SiC) power devices are increasingly favored by the market because of their excellent performance. Soitec, a leading French semiconductor materials company, and X-Fab announced that they will cooperate in Texas, USA, to jointly develop and produce high-performance silicon carbide power devices. The collaboration marks an important step for the two companies in the semiconductor field and will also inject new vitality into the development of the global semiconductor industry.

     As one of the world's largest semiconductor markets, the United States has always been a hot land for major semiconductor companies to compete. In recent years, with the rapid development of new energy vehicles, 5G communications, the Internet of Things and other fields, the demand for high-performance, low-power power devices is increasing. As a material with excellent electrical properties, silicon carbide has a broad application prospect in the field of power devices. Therefore, the cooperation between Soitec and X-Fab is of great interest and is expected to bring new opportunities to the semiconductor industry in the United States and globally.

     Soitec is a leading global supplier of semiconductor materials, committed to providing customers with high quality silicon-based materials and compound semiconductor materials. X-Fab is the largest semiconductor foundry in Europe with advanced production processes and technologies. The cooperation will make full use of the superior resources of both sides to jointly develop and produce high-performance silicon carbide power devices. The partnership is expected to create thousands of semiconductor industry jobs in Texas over the next few years, while also providing a significant boost to the local economy.

     For Soitec, this collaboration will further consolidate its leading position in the global semiconductor materials market, helping to increase the company's technical strength and market share in the silicon carbide field. For X-Fab, the cooperation with Soitec will enable it to accelerate its presence in the power device market with its technology and experience in the silicon carbide field. In addition, the two sides will jointly carry out research and development work to promote the technological innovation and industrialization of silicon carbide power devices.

     It is worth mentioning that the US government has been committed to promoting the development of the local semiconductor industry in recent years. Previously, the U.S. government had issued a series of policies to support the development of local semiconductor companies and attract foreign companies to invest in the United States. The cooperation between Soitec and X-Fab has been supported and recognized by the U.S. government and is expected to further promote the development of the domestic semiconductor industry in the United States.

     Although the silicon carbide power device market has broad prospects, it still faces some challenges. First, the production cost of silicon carbide materials is high, resulting in a relatively high price of the final product. Secondly, the demand for silicon carbide power devices in the market has not yet been fully released, and it is necessary to further increase market promotion efforts. In addition, with the intensification of market competition, how to maintain a leading position in technology and reduce costs will become a major issue that silicon carbide power device enterprises need to face.

     The cooperation between Soitec and X-Fab in Texas on silicon carbide power devices is of great significance. This cooperation will not only help enhance the competitiveness of the two sides in the semiconductor field, but also bring new opportunities for the development of the global semiconductor industry. However, in the face of market opportunities and challenges, the two sides also need to continuously increase technological innovation and market promotion efforts to achieve win-win development.