Vishay Semiconductor Diodes Division 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Vishay Semiconductor Diodes Division
記錄 11,281
頁面 283/377
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A GP20 |
5,076 |
|
- | Standard | 50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A GP20 |
3,436 |
|
- | Standard | 50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A GP20 |
2,178 |
|
- | Standard | 100V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A GP20 |
5,364 |
|
- | Standard | 100V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20 |
6,084 |
|
- | Standard | 200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20 |
2,700 |
|
- | Standard | 200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
4,068 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
2,178 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
6,012 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
7,938 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
7,992 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
4,824 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
5,706 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
2,160 |
|
SUPERECTIFIER® | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
3,528 |
|
SUPERECTIFIER® | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
8,946 |
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SUPERECTIFIER® | Standard | 1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA AXIAL |
2,070 |
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- | Standard | 200V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA AXIAL |
8,496 |
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- | Standard | 200V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 500MA AXIAL |
8,766 |
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- | Standard | 1000V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 500MA AXIAL |
5,094 |
|
- | Standard | 1000V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
8,208 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
7,488 |
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- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
6,966 |
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- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 600MA MPG06 |
5,076 |
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- | Schottky | 20V | 600mA | 550mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 600MA MPG06 |
3,654 |
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- | Schottky | 40V | 600mA | 550mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 600MA MPG06 |
6,570 |
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- | Schottky | 60V | 600mA | 700mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
2,700 |
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- | Schottky | 20V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
8,190 |
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- | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO204AL |
6,192 |
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- | Schottky | 50V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO204AL |
5,994 |
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- | Schottky | 60V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |