EPC 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商EPC
記錄 54
頁面 1/2
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS 100V 1A BUMPED DIE |
3,286,026 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 65mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | +6V, -4V | 90pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 1A BUMPED DIE |
49,314 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 1A (Ta) | 5V | 45mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15nC @ 5V | +6V, -4V | 115pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 2.8OHM BUMPED DIE |
1,148,130 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | +6V, -4V | 8.4pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 15V 3.4A DIE |
676,590 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | - | 105pF @ 6V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 550MOHM BUMPED DI |
614,934 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 550mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | +6V, -4V | 14pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V 10A BUMPED DIE |
8,381 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | +6V, -4V | 300pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 80V BUMPED DIE |
4,786 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 6.8A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | +6V, -4V | 210pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 6A BUMPED DIE |
139,368 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | +6V, -4V | 220pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 100V 18A BUMPED DIE |
2,281,512 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | +6V, -4V | 420pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 5A BUMPED DIE |
1,650 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 5A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | +6V, -4V | 140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (4-Solder Bar) | Die |
|
|
|
EPC |
GAN TRANS 200V 8.5A BUMPED DIE |
70,254 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 8.5A (Ta) | 5V | 50mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | +6V, -4V | 270pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 36A BUMPED DIE |
614,322 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 36A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | +6V, -4V | 900pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 40V 33A BUMPED DIE |
73,122 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | +6V, -4V | 1180pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V BUMPED DIE |
14,964 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 16A (Ta) | 5V | 5mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | +6V, -4V | 805pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 22A BUMPED DIE |
78,360 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
28,920 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | 5V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | +6V, -4V | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
23,736 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | - | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | - | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 31A BUMPED DIE |
33,138 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 48A (Ta) | 5V | 3.2mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | +6V, -4V | 1410pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
76,464 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | - | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | - | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
26,238 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | +6V, -4V | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 3MOHM BUMPED DIE |
43,488 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 60A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 30V 60A BUMPED DIE |
52,068 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 30V | 60A (Ta) | - | 1.3mOhm @ 40A, 5V | 2.5V @ 20mA | - | - | 2300pF @ 15V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 60A DIE |
13,752 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 60A (Ta) | 5V | 1.5mOhm @ 37A, 5V | 2.5V @ 19mA | - | +6V, -4V | 2100pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 90A BUMPED DIE |
44,250 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 90A (Ta) | 5V | 2.2mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | +6V, -4V | 1780pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 90A BUMPED DIE |
29,760 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1650pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 150V 7MOHM BUMPED DIE |
32,334 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 31A (Ta) | - | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | - | 1140pF @ 75V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 48A BUMPED DIE |
2,448 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A (Ta) | 5V | 4mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | +6V, -4V | 1530pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V BUMPED DIE |
330,630 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
AEC-Q101 GAN FET 100V 13.5 MOHM |
26,022 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +6V, -4V | 407pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET N-CH 80V 18A DIE |
373,800 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 18A | 5V | 17mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +5.75V, -4V | 415pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (6-Solder Bar) | Die |