Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 136/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 60V 115A TO-220AB |
8,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4080pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT223 |
4,914 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 500V 12A TO-3-3 |
5,364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2700pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK7 |
2,016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 250V 60A TO-247AC |
3,078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 35.7mOhm @ 42A, 10V | 5V @ 250µA | 240nC @ 10V | ±20V | 7290pF @ 25V | - | 430W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
8,388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB |
5,076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-220AB |
7,632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-220AB |
6,048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 96A TO-220AB |
3,436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-220AB |
6,966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 130A D2PAK |
3,546 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 96A D2PAK |
5,994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK |
2,268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK |
3,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 180A TO-262 |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7600pF @ 50V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-262 |
4,878 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-262 |
2,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 96A TO-262 |
2,196 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262 |
3,960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262 |
4,554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK7 |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
8,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4,572 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
6,264 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
6,966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 97A D2PAK |
3,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
8,262 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |