Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 33/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 220V TO263-3 |
14,010 |
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OptiMOS™FD | N-Channel | MOSFET (Metal Oxide) | 220V | 72A (Tc) | 10V | 15.6mOhm @ 50A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6930pF @ 110V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220 |
19,986 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 1mA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
21,516 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET TO247-4 |
8,370 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
HIGH POWER_NEW |
9,000 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | ±20V | 1503pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO247 |
8,226 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
14,148 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
HIGH POWER_NEW |
7,908 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | ±20V | 1503pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET TO247-4 |
6,624 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
13,500 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
HIGH POWER_NEW |
7,944 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42nC @ 10V | ±20V | 1752pF @ 400V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET TO247-4 |
6,396 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 200V 100A TO247AC |
6,612 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 11.5mOhm @ 60A, 10V | 4V @ 270µA | 102nC @ 10V | ±20V | 5094pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 300V 50A TO247AC |
8,478 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 40mOhm @ 30A, 10V | 4V @ 270µA | 107nC @ 10V | ±20V | 4893pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 69A TO247AC |
7,866 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 69A (Tc) | 10V | 22mOhm @ 41A, 10V | 4V @ 270µA | 96nC @ 10V | ±20V | 4897pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MV POWER MOS |
8,676 |
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OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 150V | 120A | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 7800pF @ 75V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET TO247-4 |
8,244 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
HIGH POWER_NEW |
8,748 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | ±20V | 2103pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
HIGH POWER_NEW |
8,772 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | ±20V | 2103pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
9,192 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | - | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 278µA | 270nC @ 10V | ±20V | 12020pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
8,640 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
7,956 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET TO247-4 |
7,992 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247 |
10,536 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET IFX OPTIMOS TO247 |
8,652 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 100A | 10V | 19mOhm @ 45A, 10V | 4V @ 270µA | 191nC @ 10V | ±20V | 10030pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V TO-247-3 |
7,968 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4 |
6,444 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | ±20V | 9900pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET P-CH 30V 3.8A 6-TSOP |
103,968 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 511pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4A 6-TSOP |
49,698 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 86mOhm @ 4A, 4.5V | 1.2V @ 250µA | 11.4nC @ 4.5V | ±20V | 594pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A MICRO8 |
31,632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |