Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 69/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
7,128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
6,354 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
CONSUMER |
2,430 |
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Infineon Technologies |
MOSFET N-CH 25V 22A TDSON-8 |
6,696 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 84A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2V @ 250µA | 16nC @ 10V | ±20V | 1200pF @ 12V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 3.6A DPAK |
4,806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | ±20V | 810pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
6,858 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 13µA | 6.2nC @ 10V | ±20V | 422pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 1A SAWN ON FOIL |
6,552 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Tj) | 4.5V, 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
3,600 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 0.21mA | 22nC @ 10V | ±20V | 474pF @ 100V | Super Junction | 86W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
7,200 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 4A SOT223 |
3,474 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | ±20V | 250pF @ 500V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
TRANSISTOR N-CH |
4,518 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
6,300 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
6,156 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | 2.1V @ 33µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
3,006 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 33µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 25V 22A 2WDSON |
5,454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 69A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2V @ 250µA | 25nC @ 10V | ±20V | 1862pF @ 12V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO252-3 |
4,500 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18nC @ 10V | ±20V | 513pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
2,646 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 2.8A (Ta) | 10V | 125mOhm @ 2.8A, 10V | 4V @ 520µA | 20.2nC @ 10V | ±20V | 790pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 25V 18A 8SON |
5,508 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | ±16V | 1230pF @ 12V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
7,038 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 12V 84A DPAK |
3,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 84A (Tc) | 2.8V, 4.5V | 8.5mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41nC @ 5V | ±12V | 2490pF @ 6V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 60V 56A I-PAK |
2,358 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | ±20V | 3020pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
7,092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
5,256 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
7,398 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO |
2,286 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | ±25V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8DSO |
5,274 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 6V, 10V | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8DSO |
4,932 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 6V, 10V | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
TRENCH <= 40V |
7,848 |
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Infineon Technologies |
CONSUMER |
2,772 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
5,958 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |