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Microsemi 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Microsemi Corporation
記錄 2,560
頁面 31/86
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
JAN1N5550
Microsemi
DIODE GEN PURP 200V 3A AXIAL
521
Military, MIL-PRF-19500/420
Standard
200V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5415US
Microsemi
DIODE GEN PURP 50V 3A B-MELF
6,984
Military, MIL-PRF-19500/411
Standard
50V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 50V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
JAN1N6642U
Microsemi
DIODE GEN PURP 75V 300MA D5D
8,046
Military, MIL-PRF-19500/578
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
-
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JAN1N6642US
Microsemi
DIODE GEN PURP 75V 300MA D5D
6,174
Military, MIL-PRF-19500/578
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
40pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JANTXV1N4247
Microsemi
DIODE GEN PURP 600V 1A AXIAL
2,286
Military, MIL-PRF-19500/286
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 600V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5618US
Microsemi
DIODE GEN PURP 600V 1A D5A
2,651
Military, MIL-PRF-19500/427
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
JANTX1N5619US
Microsemi
DIODE GEN PURP 600V 1A D5A
7,596
Military, MIL-PRF-19500/429
Standard
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
1N5418US
Microsemi
DIODE GEN PURP 400V 3A D5B
3,564
-
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
-
Surface Mount
E-MELF
D-5B
-65°C ~ 175°C
1N5808
Microsemi
DIODE RECT ULT FAST REC B-PKG
8,694
*
-
-
-
-
-
-
-
-
-
-
-
-
1N6662
Microsemi
RECTIFIER DIODE
3,544
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5711UR-1
Microsemi
SCHOTTKY DIODE
3,060
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N5620US
Microsemi
DIODE GEN PURP 800V 1A D5A
2,286
Military, MIL-PRF-19500/427
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N4942
Microsemi
DIODE GEN PURP 200V 1A AXIAL
3,418
Military, MIL-PRF-19500/359
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
45pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5419
Microsemi
DIODE GEN PURP 500V 3A AXIAL
6,678
Military, MIL-PRF-19500/411
Standard
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 500V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5418
Microsemi
DIODE GEN PURP 400V 3A AXIAL
6,120
Military, MIL-PRF-19500/411
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6626
Microsemi
DIODE GEN PURP 220V 1.75A AXIAL
4,860
-
Standard
220V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
1N6627
Microsemi
DIODE GEN PURP 440V 1.75A AXIAL
3,420
-
Standard
440V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
1N5419US
Microsemi
DIODE GEN PURP 500V 3A D5B
6,948
-
Standard
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 500V
-
Surface Mount
E-MELF
D-5B
-65°C ~ 175°C
1N5420US
Microsemi
DIODE GEN PURP 600V 3A D5B
2,124
-
Standard
600V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
1µA @ 600V
-
Surface Mount
E-MELF
D-5B
-65°C ~ 175°C
1N4305-1
Microsemi
DIODE SWITCHING
2,322
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4255
Microsemi
RECTIFIER DIODE
5,220
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4256
Microsemi
RECTIFIER DIODE
8,856
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4257
Microsemi
RECTIFIER DIODE
3,906
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5619
Microsemi
DIODE GEN PURP 600V 1A AXIAL
8,280
Military, MIL-PRF-19500/429
Standard
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N4305-1E3
Microsemi
DIODE SWITCHING DO-35
7,164
-
Standard
50V
200mA
850mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
2ns
100nA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 150°C
1N6630
Microsemi
DIODE GEN PURP 990V 1.4A AXIAL
8,478
-
Standard
990V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 990V
40pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
JAN1N5188
Microsemi
DIODE GEN PURP 400V 3A AXIAL
6,786
Military, MIL-PRF-19500/424
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
2µA @ 400V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
1N6543
Microsemi
DIODE RECT ULT FAST REC A-PKG
6,984
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5618US
Microsemi
DIODE GEN PURP 600V 1A D5A
2,178
Military, MIL-PRF-19500/427
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
JANTXV1N5619US
Microsemi
DIODE GEN PURP 600V 1A A-MELF
2,232
Military, MIL-PRF-19500/429
Standard
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C