Microsemi 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Microsemi Corporation

記錄 2,560

頁面 7/86

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
APT30S20BG	Microsemi	DIODE SCHOTTKY 200V 45A TO247	3,436	-	Schottky	200V	45A	850mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	500µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
1N5616	Microsemi	DIODE GEN PURP 400V 1A AXIAL	6,948	-	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
APT60D100BG	Microsemi	DIODE GEN PURP 1KV 60A TO247	5,670	-	Standard	1000V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	280ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5809US	Microsemi	DIODE GEN PURP 100V 3A B-MELF	8,136	-	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
UPR15E3/TR7	Microsemi	DIODE GEN PURP 150V 2.5A DO216	2,520	-	Standard	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
APT15D60KG	Microsemi	DIODE GEN PURP 600V 15A TO220	8,694	-	Standard	600V	15A	1.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15D100BG	Microsemi	DIODE GEN PURP 1KV 15A TO247	5,616	-	Standard	1000V	15A	2.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	260ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D20BG	Microsemi	DIODE GEN PURP 200V 30A TO247	4,860	-	Standard	200V	30A	1.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	250µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT60D120BG	Microsemi	DIODE GEN PURP 1.2KV 60A TO247	3,258	-	Standard	1200V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT75DQ120BG	Microsemi	DIODE GEN PURP 1.2KV 75A TO247	3,418	-	Standard	1200V	75A	3.1V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	325ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5614	Microsemi	DIODE GEN PURP 200V 1A AXIAL	203	-	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N3611	Microsemi	DIODE GEN PURP 200V 1A AXIAL	4,824	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5552	Microsemi	DIODE GEN PURP 600V 3A AXIAL	5,526	-	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5550	Microsemi	DIODE GEN PURP 200V 3A AXIAL	145	-	Standard	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6643US	Microsemi	DIODE GEN PURP 50V 300MA D5B	7,362	-	Standard	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	50nA @ 50V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
1N5615US	Microsemi	DIODE GEN PURP 200V 1A D5A	3,294	-	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5420	Microsemi	DIODE GEN PURP 600V 3A AXIAL	7,650	-	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N5804US	Microsemi	DIODE GEN PURP 100V 1A D5A	4,392	-	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
CDLL5195	Microsemi	DIODE GEN PURP 180V 200MA DO213	8,316	-	Standard	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
UES1104	Microsemi	DIODE GEN PURP 200V 1A AXIAL	3,042	-	Standard	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
UES1305	Microsemi	DIODE GEN PURP 300V 3A AXIAL	542	-	Standard	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 300V	-	Through Hole	B, Axial	-	-55°C ~ 150°C
APT30D120BG	Microsemi	DIODE GEN PURP 1.2KV 30A TO247	4,032	-	Standard	1200V	30A	2.5V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	370ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
MSC030SDA120K	Microsemi	UNRLS, FG, GEN2, SIC SBD, TO-220	3,078	-	Silicon Carbide Schottky	1200V	30A (DC)	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
MSC030SDA120S	Microsemi	UNRLS, FG, GEN2, SIC SBD, TO-268	7,488	-	Silicon Carbide Schottky	1200V	30A (DC)	-	No Recovery Time > 500mA (Io)	0ns	-	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3Pak	-
SMAJ5817E3/TR13	Microsemi	DIODE SCHOTTKY 1A 20V SMAJ	3,544	*	-	-	-	-	-	-	-	-	-	-	-	-
SMAJ5818E3/TR13	Microsemi	DIODE SCHOTTKY 1A 30V SMAJ	8,838	*	-	-	-	-	-	-	-	-	-	-	-	-
SMAJ5819E3/TR13	Microsemi	DIODE SCHOTTKY 1A 40V SMAJ	4,428	*	-	-	-	-	-	-	-	-	-	-	-	-
UPS120E3/TR13	Microsemi	DIODE SCHOTTKY 20V 1A POWERMITE	3,438	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS120EE3/TR13	Microsemi	DIODE SCHOTTKY 20V 1A POWERMITE	2,502	-	Schottky	20V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS160E3/TR13	Microsemi	DIODE SCHOTTKY 60V 1A POWERMITE	2,016	-	Schottky	60V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	55pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C

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