內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 489/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
7,002 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
3,400 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
5,490 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
7,884 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
5,058 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
3,276 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
4,842 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
8,568 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
3,384 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
6,642 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
6,408 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
5,688 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
3,384 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
2,736 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
6,048 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
2,934 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA |
5,310 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
3,726 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA |
6,732 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II |
5,346 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Micron Technology Inc. |
IC FLASH RAM 1G PARALLEL 533MHZ |
5,904 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -40°C ~ 85°C (TA) | Surface Mount | 121-WFBGA | 121-VFBGA (8x7.5) |
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Macronix |
IC FLASH 512KBIT |
6,228 |
|
MXSMIO™ | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 166MHz | 60µs, 750µs | - | 2.7V ~ 3.6V | - | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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Winbond Electronics |
IC DDR2 SDRAM 2GBIT 2.5NS 84BGA |
6,048 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
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Winbond Electronics |
IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA |
2,178 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
5,346 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
6,894 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
6,624 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA |
4,104 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (256M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
4,284 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
8,730 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |