晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 44/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
40V 2.9 MOHM T8 S08FL DUA |
8,298 |
|
- | 2 N-Channel (Dual) | Standard | 40V | 24A (Ta), 127A (Tc) | 2.9mOhm @ 30A, 10V | 3.5V @ 250µA | 38nC @ 10V | 2450pF @ 25V | 3.2W (Ta), 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Texas Instruments |
MOSFET 2P-CH 15V 1.17A 8-SOIC |
3,677 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 15V | 1.17A | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 840mW | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
MOSFET 2N-CH 100V 20A PWRFLAT56 |
4,932 |
|
DeepGATE™, STripFET™ VII | 2 N-Channel (Dual) | Standard | 100V | 20A | 67mOhm @ 2.5A, 10V | 4.5V @ 250µA | 7.8nC @ 10V | 408pF @ 50V | 62.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) |
|
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|
Vishay Siliconix |
MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
3,508 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 100V | 3.8A | 49mOhm @ 5.9A, 10V | 4V @ 250µA | 24nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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|
Rohm Semiconductor |
MOSFET 2P-CH 30V 7A 8-SOIC |
5,202 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | 2600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
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|
Sanken |
MOSFET 3N/3P-CH 250V 2A 12-SIP |
6,984 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 250V | 2A | - | - | - | - | - | - | Through Hole | 12-SIP | 12-SIP |
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|
Sanken |
MOSFET 6N-CH 500V 5A 12-SIP |
309 |
|
- | 6 N-Channel (3-Phase Bridge) | Standard | 500V | 5A | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | 770pF @ 10V | 4W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP |
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Infineon Technologies |
MOSFET MODULE 1200V 50A |
3,978 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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|
Microsemi |
MOSFET 2N-CH 600V 143A SP6 |
6,102 |
|
CoolMOS™ | 2 N-Channel (Half Bridge) | Standard | 600V | 143A | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | 28000pF @ 25V | 833W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
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|
Microsemi |
MOSFET 2N-CH 1000V 65A SP6 |
2,100 |
|
- | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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|
Microsemi |
MOSFET 2N-CH 1200V 105A SP3F |
8,316 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 113A (Tc) | 25mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V | 500W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
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|
Microsemi |
MOSFET 2N-CH 1200V 250A D3 |
6,300 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 250A (Tc) | 10mOhm @ 200A, 20V | 2.2V @ 10mA (Typ) | 490nC @ 20V | 9500pF @ 1000V | 1100W | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | D3 |
|
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|
Infineon Technologies |
MOSFET 2N-CH 20V 7A 8-SOIC |
7,092 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7A | 30mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Infineon Technologies |
MOSFET 2N-CH 20V 5.2A 8-SOIC |
7,200 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 60V 2.6A 8SOIC |
4,986 |
|
SIPMOS® | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC |
5,436 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 20V 8TDSON |
2,304 |
|
Automotive, AEC-Q101, HEXFET® | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL |
|
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Infineon Technologies |
MOSFET 2N-CH 12V 10A 8SOIC |
4,698 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 12V | 10A | 15mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Infineon Technologies |
MOSFET 2N-CH 100V 3.2A 8TDSON |
5,688 |
|
OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 3.2A | 75mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 720pF @ 50V | 26W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
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Infineon Technologies |
MOSFET 2N-CH 25V 19A/41A 8TISON |
3,006 |
|
OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 41A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
|
STMicroelectronics |
MOSFET 2N-CH 100V 20A 5X6 |
989 |
|
Automotive, AEC-Q101, STripFET™ III | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 35mOhm @ 4A, 10V | 3V @ 250µA | 20.5nC @ 10V | 970pF @ 25V | 70W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) |
|
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|
Diodes Incorporated |
MOSFET N/P-CH 30V SOT363 |
5,724 |
|
- | N and P-Channel | Standard | 30V | 650mA, 450mA | 400mOhm @ 590mA, 10V | 1.6V @ 250µA | 1.4nC @ 10V | 55pF @ 15V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
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|
ON Semiconductor |
MOSFET 2N-CH 50V 0.51A SSOT6 |
5,832 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 50V | 510mA | 2Ohm @ 510mA, 10V | 2.5V @ 250µA | 1nC @ 10V | 20pF @ 25V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 25V SC70-6 |
5,742 |
|
- | N and P-Channel | Logic Level Gate | 25V | 220mA, 140mA | 4Ohm @ 220mA, 4.5V | 1.5V @ 250µA | 0.4nC @ 4.5V | 9.5pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 20V 0.6A SC70-6 |
4,986 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 600mA | 420mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 2nC @ 4.5V | 114pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 60V SSOT6 |
4,500 |
|
- | N and P-Channel | Logic Level Gate | 60V | 510mA, 340mA | 2Ohm @ 510mA, 10V | 2.5V @ 250µA | 1.5nC @ 10V | 20pF @ 25V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 0.75A SC70-6 |
2,070 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 750mA | 400mOhm @ 750mA, 4.5V | 1.5V @ 250µA | 1.44nC @ 4.5V | 120pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) |
|
|
|
Vishay Siliconix |
MOSFET N/P-CH 12V/20V SC-70-6L |
3,420 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 12V, 20V | 4.5A | 28mOhm @ 5.2A, 4.5V | 1V @ 250µA | 16nC @ 8V | 455pF @ 6V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 5.2A 8-TSSOP |
2,880 |
|
TrenchFET® | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.2A | 22mOhm @ 6.5A, 4.5V | 1.6V @ 250µA | 18nC @ 4.5V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
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|
ON Semiconductor |
MOSFET 2P-CH 30V 2.9A MICROFET6 |
4,212 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90mOhm @ 2.9A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 530pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |