晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 330/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
2,898 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 3mOhm @ 40A, 10V | 2.5V @ 250µA | 80nC @ 5V | ±20V | 3800pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 600V 14A TO-263AA |
7,416 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 540mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1480pF @ 25V | - | 327W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 195A TO262 |
8,874 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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ON Semiconductor |
MOSFET N-CH 800V 7A TO-3P |
10,716 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1680pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
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|
Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC |
8,694 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 17A (Ta) | 2.5V, 4.5V | 3mOhm @ 25A, 4.5V | 600mV @ 250µA (Min) | 60nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
8,766 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
6,498 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET NCH 300V 19A TO262 |
8,304 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | 2340pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-901 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET P-CH 100V 18A TO-252 |
7,578 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 120mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±15V | 2100pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 200V 45A LPTS |
3,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 45A (Tc) | 10V | 55mOhm @ 22.5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 4200pF @ 25V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 105 MOHM TYP., |
5,940 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 230mOhm @ 7.5A, 10V | 4.75V @ 250µA | 20nC @ 10V | ±25V | 800pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 120A I2PAK |
7,608 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.2mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | ±20V | 11810pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Diodes Incorporated |
MOSFET N-CH 60V 100A TO263 |
3,798 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 4.7W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 120A D2PAK |
6,552 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2.5V @ 250µA | 230nC @ 10V | ±20V | 17100pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN 40V |
6,858 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 10V | 1.72mOhm @ 20A, 10V | 3.5V @ 250µA | 270nC @ 10V | ±20V | 16480pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 500V 16A LPT |
3,294 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 325mOhm @ 8A, 10V | 5V @ 1mA | 46nC @ 10V | ±30V | 1700pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 15A TO-220F-3 |
17,772 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 110A TO263 |
2,754 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2.5V @ 250µA | 200nC @ 10V | ±20V | 7450pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 12A POWER MOSFET; R6012 |
7,110 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 15V | 390mOhm @ 6A, 15V | 7V @ 2.5mA | 28nC @ 15V | ±30V | 900pF @ 100V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3 |
6,672 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | ±20V | 8130pF @ 37.5V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 30V 80A D2PAK |
2,034 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 3mOhm @ 40A, 10V | 2.5V @ 250µA | 80nC @ 10V | ±20V | 3800pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 330V 18A D2PAK |
8,478 |
|
Automotive, AEC-Q101, STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 330V | 18A (Tc) | 10V | 180mOhm @ 9A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1650pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600B TO-263 |
4,500 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.6V @ 250µA | 34nC @ 10V | ±20V | 1935pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Vishay Siliconix |
MOSFET N-CH 80V 120A D2PAK |
3,598 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 7.5V, 10V | 3.2mOhm @ 30A, 10V | 4V @ 250µA | 141nC @ 10V | ±20V | 7910pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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STMicroelectronics |
MOSFET N-CH 600V 7A D2PAK |
2,196 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53nC @ 10V | ±30V | 1110pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
5,058 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 80A, 10V | 3V @ 250µA | 214nC @ 10V | ±20V | 12585pF @ 15V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A TO263 |
8,154 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Panasonic Electronic Components |
MOSFET N-CH 200V 22A TO-220D |
5,724 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 22A (Tc) | 10V | 62mOhm @ 11A, 10V | 4.5V @ 1mA | - | ±30V | 3177pF @ 25V | - | 2W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220D-A1 | TO-220-3 Full Pack |
|
|
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STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
3,708 |
|
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 40A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 3850pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 80V 90A |
3,906 |
|
Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4mOhm @ 45A, 10V | 4.5V @ 250µA | 96nC @ 10V | ±20V | 6340pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |