晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 349/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A TO220 |
5,472 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
6,048 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 35mOhm @ 12.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±20V | 920pF @ 50V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8 |
2,628 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.95mOhm @ 25A, 10V | 1.4V @ 250µA | 585nC @ 10V | ±12V | 20000pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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STMicroelectronics |
MOSFET N-CH 60V 100A F7 D2PAK |
3,888 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1980pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 49A SO8FL |
3,204 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 49A (Ta), 319A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.84W (Ta), 161W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 55A TO-220AB |
7,668 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1812pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
301 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 7.5V, 10V | 7.8mOhm @ 20A, 10V | 3.5V @ 250µA | 72nC @ 10V | ±20V | 2870pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 80V 100A POWERFLAT |
5,094 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 6.1Ohm @ 10A, 10V | 4.5V @ 250µA | 46.8nC @ 10V | ±20V | 3435pF @ 40V | - | 4.8W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 131A TO263 |
3,744 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 131A (Tc) | 7.5V, 10V | 5.6mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 3330pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET TO263-3 |
4,068 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO-220AB |
7,362 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 150V 76A 8TDSON |
5,238 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 8V, 10V | 11mOhm @ 38A, 10V | 4.6V @ 91µA | 35nC @ 10V | ±20V | 2770pF @ 75V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 18A D2PAK |
6,210 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 18A WDSON-2 |
7,002 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Ta), 90A (Tc) | 10V | 4.4mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | ±20V | 5700pF @ 40V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Rohm Semiconductor |
R8005ANJ FRG IS A POWER MOSFET W |
5,850 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 2.1Ohm @ 2.5A, 10V | 5V @ 1mA | 20nC @ 10V | ±30V | 500pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220FP |
5,616 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 60A D2PAK |
3,708 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 4300pF @ 25V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 900 V, 0.60 OHM TYP., |
8,946 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 800mOhm @ 1.17A, 10V | 5V @ 100µA | - | ±30V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-220AB |
5,958 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET P-CH 100V 15A TO220-3 |
5,364 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | ±20V | 1490pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 6.5A DPAK |
5,400 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 1.05Ohm @ 3.25A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 620pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET P-CH 40V 120A D2PAK |
6,804 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 250µA | 800nC @ 10V | ±20V | 39000pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 63.5A D2PAK |
2,610 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 63.5A (Tc) | 7.5V, 10V | 31mOhm @ 30A, 10V | 4V @ 250µA | 88nC @ 10V | ±20V | 3002pF @ 125V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
7,596 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 5A IPAK |
6,966 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 270pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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|
IXYS |
MOSFET P-CH 50V 32A TO-220 |
5,022 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 32A (Tc) | 10V | 39mOhm @ 500mA, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 1975pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 1000V 800MA D2PAK |
3,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6nC @ 5V | ±20V | 325pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Infineon Technologies |
MOSFET N-CH 800V 6A TO-220AB |
6,426 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 16A TO-263 |
5,076 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 500V 1.6A DPAK |
4,626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | - | 2.3Ohm @ 800mA, 0V | - | 23.7nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |