晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 352/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET N-CH 1000V 30A T-MAX |
2,106 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO-3PF |
5,040 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Ta) | 10V | 93mOhm @ 23A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 6100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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|
IXYS |
850V/66A ULTRA JUNCTION X-CLASS |
6,894 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230nC @ 10V | ±30V | 8900pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
|
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|
IXYS |
MOSFET N-CH 170V 320A TO264 |
2,070 |
|
GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 170V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640nC @ 10V | ±20V | 45000pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
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|
STMicroelectronics |
MOSFET N-CH 650V 84A TO-247 |
6,498 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | ±25V | 8825pF @ 100V | - | 450W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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|
IXYS |
300V/210A ULTRA JUNCTION X3-CLAS |
3,490 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 5.5mOhm @ 105A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 24.2nF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 60A PLUS247 |
4,932 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610nC @ 10V | ±30V | 24000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
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|
Vishay Semiconductor Diodes Division |
SINGLE SWITCH PWR MODULE SOT-227 |
7,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 400A (Tc) | 10V | 2.75mOhm @ 200A, 10V | 5.4V @ 1mA | 250nC @ 10V | ±20V | 13700pF @ 25V | - | 909W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 500V 112A SOT227 |
4,950 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 112A (Tc) | 10V | 39mOhm @ 66A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18600pF @ 25V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 250V 240A SOT227B |
8,586 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 240A (Tc) | 10V | 4.5mOhm @ 120A, 10V | 4.5V @ 8mA | 345nC @ 10V | ±20V | 23800pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 200V 188A SOT-227B |
133 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 188A (Tc) | 10V | 10.5mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | ±20V | 18600pF @ 25V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 250V 90A SOT-227 |
2,340 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 250V | 90A (Tc) | 10V | 33mOhm @ 500mA, 10V | 4.5V @ 3mA | 640nC @ 10V | ±20V | 23000pF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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|
IXYS |
MOSFET N-CH 850V 110A SOT227B |
7,578 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 110A (Tc) | 10V | 33mOhm @ 55A, 10V | 5.5V @ 8mA | 425nC @ 10V | ±30V | 17000pF @ 25V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
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Diodes Incorporated |
MOSFET N-CH 25V 1.3A DFN1006-3 |
2,610 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 1.3A (Ta) | 1.8V, 4.5V | 350mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.85nC @ 4.5V | ±8V | 70.13pF @ 15V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 3.8A 8SO |
8,496 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 70mOhm @ 5.3A, 10V | 3V @ 250µA | 5.2nC @ 4.5V | ±20V | 563pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A UDFN6B |
2,034 |
|
U-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 19.5mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | ±20V | 620pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 20V 820MA 3DFN |
6,372 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 820mA (Ta) | 1.5V, 4.5V | 495mOhm @ 800mA, 4.5V | 1.2V @ 250µA | 3nC @ 4.5V | ±8V | 80pF @ 10V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Nexperia |
MOSFET N-CH 12V WLCSP |
6,624 |
|
- | N-Channel | MOSFET (Metal Oxide) | 12V | 4.7A (Ta) | 1.5V, 4.5V | 42mOhm @ 3A, 4.5V | 900mV @ 250µA | 9nC @ 4.5V | ±8V | 335pF @ 6V | - | 400mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (2x2) | 4-XFBGA, WLCSP |
|
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Vishay Siliconix |
MOSFET P-CH 20V 2.7A 4-MICROFOOT |
5,130 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Tc) | 1.5V, 4.5V | 95mOhm @ 1A, 4.5V | 800mV @ 250µA | 10nC @ 4.5V | ±8V | 580pF @ 10V | - | 900mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-MICRO FOOT® (0.8x0.8) | 4-XFBGA |
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Diodes Incorporated |
MOSFET N-CH 20V 2.8A SOT363 |
6,696 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 1.5V, 4.5V | 48mOhm @ 3A, 4.5V | 1V @ 250µA | 7nC @ 4.5V | ±8V | 594.3pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET P-CH 20V 4.5A SSOT-6 |
6,966 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 53mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 13nC @ 4.5V | ±12V | 890pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 4A SOT26 |
6,516 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 38mOhm @ 6A, 10V | 2.2V @ 250µA | 8.6nC @ 10V | ±20V | 424pF @ 5V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 8A 8-SO |
7,722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 14mOhm @ 8A, 10V | 1.6V @ 250µA | 8.7nC @ 5V | ±20V | 798pF @ 10V | - | 1.46W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT |
4,716 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 10V | 44mOhm @ 1.5A, 10V | 1.2V @ 250µA | 27nC @ 10V | ±12V | 765pF @ 10V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
|
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Vishay Siliconix |
MOSFET P-CH 12V 12A SC70-6 |
6,408 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Tc) | 1.8V, 4.5V | 13mOhm @ 5A, 4.5V | 1V @ 250µA | 50nC @ 4.5V | ±8V | 3050pF @ 6V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
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Vishay Siliconix |
MOSFET P-CH 20V 9A SC-75-6 |
4,338 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 1.8V, 4.5V | 58mOhm @ 3.7A, 4.5V | 1V @ 250µA | 21nC @ 8V | ±8V | - | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
|
|
|
Diodes Incorporated |
MOSFET P-CH 25V 7.3A 6DFN |
3,418 |
|
- | P-Channel | MOSFET (Metal Oxide) | 25V | 7.3A (Ta) | 1.8V, 4.5V | 26mOhm @ 6.4A, 4.5V | 1V @ 250µA | 28.2nC @ 4.5V | ±8V | 2530pF @ 15V | - | 690mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020 (2x2) | 6-PowerXDFN |
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Diodes Incorporated |
MOSFET N-CHA 60V 10.6A POWERDI |
2,538 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 10.6A (Ta), 37.1A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 864pF @ 30V | - | 3W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 2.6A SSOT-6 |
6,174 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 6V, 10V | 125mOhm @ 2.6A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 660pF @ 50V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 25A PQFN |
6,012 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.7mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | ±20V | 2496pF @ 10V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-PowerTDFN |