晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 389/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
R6030JNZ4 IS A POWER MOSFET WITH |
5,688 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74nC @ 15V | ±30V | 2500pF @ 100V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
4,986 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 4.7A (Tc) | 15V, 18V | 350mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3nC @ 18V | +23V, -7V | 182pF @ 800V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V |
5,616 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 3459pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 150V 130A TO-247 |
5,274 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 8.5mOhm @ 70A, 10V | 4.5V @ 250µA | 87nC @ 10V | ±20V | 4770pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 150V 240A TO-247 |
7,848 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 240A (Tc) | 10V | 4.4mOhm @ 120A, 10V | 4.5V @ 250µA | 195nC @ 10V | ±20V | 8900pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
ON Semiconductor |
FET 650V 65AA TO247 |
8,640 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
FET 650V 65A TO247AD |
2,826 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
IXYS |
300V/100A ULTRA JUNCTION X3-CLAS |
5,508 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 100A (Tc) | 10V | 13.5mOhm @ 50A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7.66nF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
3,042 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5nC @ 18V | +23V, -7V | 289pF @ 800V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
|
|
|
Microsemi |
GEN2 SIC MOSFET 1200V 280MOHM TO |
4,266 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 9.4A (Tc) | 20V | 350mOhm @ 5A, 20V | 2.8V @ 1mA | 20nC @ 20V | +25V, -10V | 300pF @ 1000V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Microsemi |
GEN2 SIC MOSFET 1200V 280MOHM D3 |
2,952 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
6,822 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 13A (Tc) | 15V, 18V | 220mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5nC @ 18V | +23V, -7V | 289pF @ 800V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
|
|
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STMicroelectronics |
MOSFET N-CH 600V 35A TO-247 |
8,568 |
|
FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 88mOhm @ 17.5A, 10V | 5V @ 250µA | 145nC @ 10V | ±25V | 4300pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Rohm Semiconductor |
R6042JNZ4 IS A POWER MOSFET WITH |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 15V | 104mOhm @ 21A, 15V | 7V @ 5.5mA | 100nC @ 15V | ±30V | 3500pF @ 100V | - | 495W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
|
|
|
Rohm Semiconductor |
NCH 600V 47A POWER MOSFET. R604 |
5,922 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 5V @ 1mA | 100nC @ 10V | ±20V | 4300pF @ 25V | - | 481W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 300V 60A MAX247 |
5,490 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 300V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 100µA | 220nC @ 10V | ±30V | 7200pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
|
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|
IXYS |
200V/180A ULTRA JUNCTION X3-CLAS |
6,276 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 180A (Tc) | 10V | 7.5mOhm @ 90A, 10V | 4.5V @ 4mA | 154nC @ 10V | ±20V | 10300pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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Vishay Siliconix |
MOSFET N-CH 600V 61A TO-247AC |
5,436 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
7,452 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13nC @ 18V | +23V, -7V | 454pF @ 800V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
|
|
|
Rohm Semiconductor |
NCH 600V 47A POWER MOSFET. R604 |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 3850pF @ 25V | - | 481W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Rohm Semiconductor |
NCH 650V 47A POWER MOSFET. R654 |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 80mOhm @ 25.8A, 10V | 5V @ 1.72mA | 100nC @ 10V | ±20V | 4100pF @ 25V | - | 480W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 59A TO-247 |
4,734 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 49A (Tc) | 10V | 65mOhm @ 24.5A, 10V | 5V @ 250µA | 188nC @ 10V | ±25V | 6200pF @ 50V | - | 350W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
8,946 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13nC @ 18V | +23V, -7V | 454pF @ 800V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
|
|
|
Microsemi |
MOSFET 1200V 25A TO-247 |
4,176 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
FET 650V 75A TO247 |
4,140 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
STMicroelectronics |
N-CHANNEL 950 V, 0.110 OHM TYP., |
3,924 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 950V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 93nC @ 10V | ±30V | 3300pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
IXYS |
200V/220A ULTRA JUNCTION X3-CLAS |
7,848 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Rohm Semiconductor |
NCH 600V 50A POWER MOSFET. R605 |
4,914 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 15V | 83mOhm @ 25A, 15V | 7V @ 5mA | 120nC @ 15V | ±30V | 4500pF @ 100V | - | 615W (Tc) | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
|
|
|
Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,394 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21nC @ 18V | +23V, -7V | 707pF @ 800V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
|
|
|
Infineon Technologies |
IC GAN FET 600V 60A 8SON |
3,690 |
|
CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |